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Deep level profiling technique in the semiconductor of MIS structure

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New Developments in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 301))

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References

  1. Lysenko V.S. and Nazarov A.N. Radiation damage in the near-surface layer of oxidized silicon ion-implanted by different impurities.-Poverhnost. 1982,N5,82-88 (in Russian)

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  2. Kuhn M.: A quasi-static technique for MOS CV and surface state measurment.-Sol.St.Blectr.1970,13,N6,873–885.

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  3. Qin G.G. and Sach C.T.: Theory of concentration profiling for semi-conductor with many deep levels.-Sol.St.Electr.1982,25,N10,1045–1053.

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Authors and Affiliations

  1. Academy of Sciences of the Ukr.SSR, Institute of Semiconductors, Kiev-28, 252028, Prospect Nauki 115, USSR

    V. S. Lysenko, A. N. Nazarov & T. E. Rudenko

Authors
  1. V. S. Lysenko
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  2. A. N. Nazarov
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  3. T. E. Rudenko
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G. Ferenczi F. Beleznay

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© 1988 Springer-Verlag

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Lysenko, V.S., Nazarov, A.N., Rudenko, T.E. (1988). Deep level profiling technique in the semiconductor of MIS structure. In: Ferenczi, G., Beleznay, F. (eds) New Developments in Semiconductor Physics. Lecture Notes in Physics, vol 301. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034432

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  • DOI: https://doi.org/10.1007/BFb0034432

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19215-2

  • Online ISBN: 978-3-540-39145-6

  • eBook Packages: Springer Book Archive

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