Skip to main content
SpringerLink
Log in

Hexagonal site interstitial related states in silicon

  • Conference paper
  • First Online:
New Developments in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 301))

  • 862 Accesses

Abstract

The Zn, Si and S interstitials in silicon are studied at the hexagonal site with the large unit cell pseudopotential method. The electronic energy scheme and charge density are investigated. The origin of the impurity related states stems from the interactions between the atomic orbitals of the interstitials and the nearest-neighbour bonding orbitals of the host crystal. The energy levels are strongly affected by the impurity potential.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. H.P. Hjalmarson, P. Vogl, D.J. Wolford, & J.D. Dow, Phys.Rev.Lett. 44, 810 (1980); O.F. Sankey, & J.D. Dow, Phys.Rev. B27, 7641 (1983).

    Google Scholar 

  2. M. Lanoo, & J. Bourgoin, Point Defect in Semiconductors I. Springer Verlag, Berlin (1981).

    Google Scholar 

  3. C. Weigel, Inst.Phys.Conf. Ser.No. 46, 186 (1979)

    Google Scholar 

  4. E. Kauffer, P. Pecheur, & M. Gerl, Revue Phys.Appl. 15, 849 (1980).

    Google Scholar 

  5. S.T. Pantelides, I. Ivanov, M. Scheffler, & J.P. Vigneron, Physica 116B, 18 (1983); J.P. Vigneron, M. Scheffler, & S.T. Pantelides, Physica 117B&118B, 137 (1983).

    Google Scholar 

  6. G.A. Baraff, M. Schlüter, & G. Allan, Phisica 116B, 76 (1983); Phys.Rev. B27, 1010 (1983); Phys.Rev.Lett. 50, 739 (1983).

    Google Scholar 

  7. Y. Bar-Yam, & J.D. Joannopoulos, Phys.Rev.Lett. 52, 1129 (1984)

    Google Scholar 

  8. R. Car, P.J. Kelly, A. Oshiyama, & S.T. Pantelides, Phys. Rev.Lett. 52, 1814 (1984).

    Google Scholar 

  9. P. Boguslawski, G. Papp, & A. Baldereschi, Solid State Comm. 52, 155 (1984)

    Google Scholar 

  10. Several authors have used the large unit cell approach to study impurity problems. See, for example: S.G. Louie, M. Schlüter, J.R. Chelikowsky & M.L. Cohen, Phys.Rev. B13, 1654 (1976); U. Lindefelt, J.Phys. C11, 85 and 3651 (1978); W.E. Pickett, M.L. Cohen & C. Kittel, Phys.Rev. B20, 5050 (1979); D. Vanderbilt & J.D. Joannopoulos, Phys.Rev.Lett. 49, 823 (1982); P. Dzwig, M.G. Burt, J.C. Inkson & V. Crum, J.Phys. C15, 1187 (1982); R.A. Evarestov, Kvantovohimicseszkie metodi v teorii tverdovo tela, Izdatelsztvo Leningradszkovo Universiteta (1982)

    Google Scholar 

  11. J.A. Appelbaum, & D.R. Hamann, Phys.Rev. B8, 1777 (1973)

    Google Scholar 

  12. J. Bernholc, S.T. Pantelides, N.O. Lipari, & A. Baldereschi, Solid State Commun. 37, 705 (1981); J. Bernholc, N.O. Lipari, S.T. Pantelides, & M. Scheffler, Phys.Rev. B26, 5706 (1982). *** DIRECT SUPPORT *** A3418232 00004

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Theoretical Physics, Attila József University, Aradi Vértanúk tere 1, Szeged, Hungary

    G. Papp

  2. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

    P. Boguslawski

  3. Institut de Physique Appliquée, Ecole Polytechnique Fédérale, Lausanne, Switzerland

    A. Baldereschi

  4. Istituto di Fisica Teoretica, Universitá di Trieste, Italy

    A. Baldereschi

Authors
  1. G. Papp
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. Boguslawski
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Baldereschi
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

G. Ferenczi F. Beleznay

Rights and permissions

Reprints and permissions

Copyright information

© 1988 Springer-Verlag

About this paper

Cite this paper

Papp, G., Boguslawski, P., Baldereschi, A. (1988). Hexagonal site interstitial related states in silicon. In: Ferenczi, G., Beleznay, F. (eds) New Developments in Semiconductor Physics. Lecture Notes in Physics, vol 301. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034425

Download citation

  • DOI: https://doi.org/10.1007/BFb0034425

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19215-2

  • Online ISBN: 978-3-540-39145-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation