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New Developments in Semiconductor Physics pp 126–142Cite as

Band-edge offsets in semiconductor heterojunctions

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Part of the book series: Lecture Notes in Physics ((LNP,volume 301))

Abstract

The band-edge offset (BEO) in semiconductor heterostructures is the most crucial parameter for the interpretation and prediction of the physical properties of such a device. The different experimental procedures for obtaining the BEO are discussed. We have recently proposed a new method, using the electron-beam-induced current (EBIC) as an indication for obtaining flat-band condition when an external bias is applied. Results for GaAs/GaAlAs and PbSe/PbEuSe are given. Alligning deep-impurity levels of transition metals proved to be a valuable tool in predicting BEO's. Recently reported results will be compared with the predictions. On the other hand, the determination of the energetic position of band edges by measuring BEO's can give information where to look for energy levels of as yet unobserved deep impurities. Results for InAs and GaSb are discussed. Based on a combination of transition-metal-energy level alignment and experimental results of BEO's in binary and ternary III–V compounds a level order of valence-band edges in these compounds is proposed. The importance of a fixed reference level formed by transitions metals in the semiconductor is emphasized and recently reported measurements of the deformation potential are reviewed.

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  1. Institut für Experimentalphysik, Universität Linz, A-4040, Linz, Austria

    H. Heinrich

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  1. H. Heinrich
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G. Ferenczi F. Beleznay

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© 1988 Springer-Verlag

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Heinrich, H. (1988). Band-edge offsets in semiconductor heterojunctions. In: Ferenczi, G., Beleznay, F. (eds) New Developments in Semiconductor Physics. Lecture Notes in Physics, vol 301. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034422

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  • DOI: https://doi.org/10.1007/BFb0034422

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19215-2

  • Online ISBN: 978-3-540-39145-6

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