Advertisement

Electronic structure and electrical characterisation of semiconductor heterostructures

  • N.J. Pulsford
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 419)

Abstract

The electronic structure and electrical properties of low-dimensional semiconductor heterostructures are reviewed. Perpendicular and parallel transport in GaAs/GaAlAs heterostructures is discussed, as well as novel quantum phenomena induced by strong magnetic fields and lateral confinement.

Keywords

Landau Level Resonant Tunnelling Quantum Hall Effect Negative Differential Resistance Hall Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    N.W.Ashcroft and N.D.Mermin, “Solid State Physics”, Holt-Sanders, Tokyo, Japan (1981)Google Scholar
  2. [2]
    G.Bastard, “Wave Mechanics Applied to Semiconductor Heterostructures”, Les Ulis, France (1988)Google Scholar
  3. [3]
    C.Weisbuch and B.Vinter, “Quantum Semiconductor Structures”, Academic Press, London, England (1991)Google Scholar
  4. [4]
    L.L.Chang, L.Esakiand R.Tsu, Appl. Phys. Lett. 24, 593 (1974)CrossRefGoogle Scholar
  5. [5]
    E.E.Mendez in “Physics and Applications of Quantum Wells and Superlattices”, NATO ASI Series B170, 159 (1987)Google Scholar
  6. [6]
    T.W.Hickmott, P.Solomon, R.Fisher and H.Morkoc, Appl. Phys. Lett. 44, 90 (1984)CrossRefGoogle Scholar
  7. [7]
    M.J.Paulus, C.A.Bozada, C.I.Huang, S.C.Dudley, K.R.Evans, C.E.Stutz, R.L.Jones and M.E.Cheney, Appl. Phys. Lett. 53, 204 (1988)CrossRefGoogle Scholar
  8. [8]
    T.P.E.Broekaert, W.Lee and C.G.Fonstad, Appl. Phys. Lett. 53, 1545 (1988)CrossRefGoogle Scholar
  9. [9]
    V.J.Goldman, D.C.Tsui and J.E.Cunningham, Phys. Rev. B36, 7635 (1987)Google Scholar
  10. [10]
    T.C.L.G.Sollner, E.R.Brown, C.D.Parker and W.D.Goodhue in “Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures”, NATO ASI B231, 283 (1990)Google Scholar
  11. [11]
    M.L.Leadbeater, E.S.Alves, L.Eaves, M.Henini, O.H.Hughes, F.W.Sheard and G.A.Toombs, Semicond. Sci. Technol. 3, 1060 (1988)CrossRefGoogle Scholar
  12. [12]
    L.Esaki and R.Tsu, IBM J.Dev. 14, 61 (1970)Google Scholar
  13. [13]
    R.O.Grondin, W.Perod, J.Ho, D.K.Ferry and G.J.Iafrate, Superlattices Microstruct. 1, 183 (1985)CrossRefGoogle Scholar
  14. [14]
    H.T.Grahn, K.vonKlitzing, K.Ploog and G.H.Döhler, Phys. Rev. B43, 12094 (1991)Google Scholar
  15. [15]
    H.Sakaki, Jpn. J. Appl. Phys. 28, L361 (1989)CrossRefGoogle Scholar
  16. [16]
    H.Noguchi, T.Takamasu, N.Miuraand H.Sakaki, Surf. Sci. 267, 562 (1992)CrossRefGoogle Scholar
  17. [17]
    G.E.Stillman and C.M.Wolfe, Thin Solid Films 31, 69 (1976)CrossRefGoogle Scholar
  18. [18]
    R.Dingle, H.L.Störmer, A.C.Gossard and W.Weigmann, Appl. Phys. Lett. 33, 665 (1978)CrossRefGoogle Scholar
  19. [19]
    E.F.Shubert and K.Ploog, Phys. Rev. B30, 7021 (1984)Google Scholar
  20. [20]
    M.Heiblum, E.E.Mendez and F.Stern, Appl. Phys. Lett. 44, 1064 (1984)CrossRefGoogle Scholar
  21. [21]
    K.Hirakawa and H.Sakaki, Phys. Rev. B33, 8291 (1986)Google Scholar
  22. [22]
    B.J.F.Lin, Ph.D.Thesis, Princeton University, Princeton, New Jersey (1984)Google Scholar
  23. [23]
    H.W.Liu, R.Ferreira, G.Bastard, C.Delalande, J.F.Palmier and B.Etienne, Appl. Phys. Lett. 54, 2082 (1984)CrossRefGoogle Scholar
  24. [24]
    H.L.Störmer, A.C.Gossard and W.Weigmann, Solid State Commun. 41, 707 (1982)CrossRefGoogle Scholar
  25. [25]
    T.Englert, J.C.Maan, D.C.Tsui, and A.C.Gossard, Solid State Commun. 45, 989 (1983)CrossRefGoogle Scholar
  26. [26]
    R.J.Haug, private communicationGoogle Scholar
  27. [27]
    K.vonKlitzing, G.Dorda and M.Pepper, Phys. Rev. Lett. 45, 494 (1980)CrossRefGoogle Scholar
  28. [28]
    T.Quinn, Metrolgia 26, 69 (1989)CrossRefGoogle Scholar
  29. [29]
    H.Aoki and T.Ando, Solid State Commun. 38, 1079 (1981)CrossRefGoogle Scholar
  30. [30]
    R.E.Prange, Phys. Rev. B23, 4802 (1981)Google Scholar
  31. [31]
    M.Büttiker in “Semiconductors and Semimetals” 35, 191 (1992)Google Scholar
  32. [32]
    R.J.Nicholas, R.J.Haug, K.vonKlitzing and G.Weimann, Phys. Rev. B37, 1294 (1988)Google Scholar
  33. [33]
    T.Ando and Y.Uemura, J. Phys. Soc. Jpn. 37, 1044 (1984)CrossRefGoogle Scholar
  34. [34]
    R.J.Nicholas in “Physics and Applications of Quantum Wells and Superlattices”, NATO ASI Series B170, 249 (1987)Google Scholar
  35. [35]
    D.C.Tsui, H.L.Störmer and A.C.Gossard, Phys. Rev. Lett. 48, 1559 (1982)CrossRefGoogle Scholar
  36. [36]
    for review see “The Quantum Hall Effect”, eds R.E.Prange and S.M.Girvin, Springer-Verlag, New York (1987)Google Scholar
  37. [37]
    B.J.vanWees, H.vanHouten, C.W.J.Beenakker, J.G.Williamson, L.P.Kouvenhouven, D.van derMarel and C.T.Foxon, Phys. Rev. Lett. 60, 848 (1988)CrossRefPubMedGoogle Scholar
  38. [38]
    D.A.Wharam, T.J.Thornton, R.Newbury, M.Pepper, H.Ahmed, J.E.F.Frost, D.G.Hasko, D.C.Peacock, D.A.Ritchie and G.A.C.Jones, J. Phys. C21, L209 (1988)Google Scholar
  39. [39]
    C.W.J.Beenakker and H.vanHouten, Phys. Rev. B38, 3232 (1988)Google Scholar
  40. [40]
    for review see H.van Houten, C.W.J.Beenakker and B.T.van Wees in “Semiconductors and Semimetals” 35, 9 (1992)Google Scholar
  41. [41]
    L.I.Glazman, G.B.Lesovik, D.E.Khmel'netskii and R.I.Shekhter, JETP Lett. 48, 238 (1988)Google Scholar
  42. [42]
    H.vanHouten, C.W.J.Beenakker, P.H.M.vanLoosdrecht, T.J.Thornton, H.Ahmed, M.Pepper, C.T.Foxon and J.J.Harris, Phys. Rev. B37, 8534 (1988)Google Scholar

Copyright information

© Springer-Verlag 1993

Authors and Affiliations

  • N.J. Pulsford
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany

Personalised recommendations