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Epitaxial growth of nanostructured III–V Semiconductors

  • Klaus H. Ploog
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 419)

Keywords

Molecular Beam Epitaxy Group Versus Reflection High Energy Electron Diffraction Molecular Beam Epitaxy Growth Metalorganic Vapor Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    L. Esaki and R. Tsu, IBM J. Res. Develop. 14, 61 (1970)Google Scholar
  2. [2]
    For a review on the first decade of MBE see: A.Y. Cho and J.R. Arthur, Prog. Solid-State Chem. 10, 157 (1975)CrossRefGoogle Scholar
  3. [3]
    L.L. Chang and K. Ploog (Eds), Molecular Beam Epitaxy and Heterostructures (Martinus Nijhoff, Dordrecht, 1985), NATO Adv. Sci. Inst. Ser., Vol. E87, (1985)Google Scholar
  4. [4]
    B.A. Joyce, Rep. Prog. Phys. 48, 1637 (1985)CrossRefGoogle Scholar
  5. [5]
    G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice (Academic Press, Boston, 1989)Google Scholar
  6. [6]
    G.B. Stringfellow, Mater. Res. Soc. Symp. Proc. 145, 171 (1989)Google Scholar
  7. [7]
    M.B. Panish and H. Temkin, Ann. Rev. Mater. Sci. 19, 209 (1989)CrossRefGoogle Scholar
  8. [8]
    W.T. Tsang, in: VLSI Electronics: Microstructure Science, Ed. N.G. Einspruch (Academic Press, New York, 1989) Vol. 21, p. 255Google Scholar
  9. [9]
    S. Dushman; in: Scientific Foundations of Vacuum Technique, Ed. J.M. Laffarty, (John Wiley, New York, 1962) p. 80Google Scholar
  10. [10]
    For a recent survey see: Proc. 3rd Int. Conf. Chemical Beam Epitaxy & Related Growth Techniques 1991 [CBE-3], Eds. G.J. Davies, J.S. Foord, and W.T. Tsang (Elsevier, Amsterdam, 1992), J. Cryst. Growth, Vol. 120 (1992)Google Scholar
  11. [11]
    A.C. Gossard, Treat. Mater. Sci. Technol. 24, 13 (1981)Google Scholar
  12. [12]
    K. Ploog, Angew. Chem. Int. Ed. Eng. 27, 593 (1988)CrossRefGoogle Scholar
  13. [13]
    For a recent survey see: Proc. 6th Int. Conf. Molecular Beam Epitaxy 1990 [MBE-VI], Eds. C.W. Tu and J.S. Harris (Elsevier, Amsterdam, 1991), J. Cryst. Growth, Vol. 111 (1991)Google Scholar
  14. [14]
    C.T. Foxon and B.A. Joyce, Curr. Topics Mater. Sci. 7, 1 (1981)Google Scholar
  15. [15]
    M. Ilegems, J. Appl. Phys. 48, 1278 (1977)CrossRefGoogle Scholar
  16. [16]
    D.L. Miller and P.M. Asbeck, J. Appl. Phys. 57, 1816 (1985CrossRefGoogle Scholar
  17. [17]
    For a recent survey on carbon doping of GaAs see: R.J. Malik, J. Nagle, M. Micovic, T. Harris, R.W. Ryan, and L.C. Hopkins, J. Vac. Sci. Technol. 810, 850 (1992) and references thereinGoogle Scholar
  18. [18]
    E. Nottenburg, H.J. Bühlmann, M. Frei, and M. Ilegems, Appl. Phys. Lett. 44, 71 (1984)CrossRefGoogle Scholar
  19. [19]
    J. Maguire, R. Murray, R.C. Newman, R.B. Beal, and J.J. Harris, Appl. Phys. Lett. 50, 516 (1987)CrossRefGoogle Scholar
  20. [20]
    L. Gonzales. J.B. Clegg. D. Hilton. J.P. Gowers. C.T. Foxon, and B.A. Joyce, Appl. Phys. A41, 237 (1986)Google Scholar
  21. [21]
    For a review on delta-doping see: E.F. Schubert, J. Vac. Sci. Technol. A8, 2980 (1990)Google Scholar
  22. [22]
    W.I. Wang, Surf. Sci. 174, 31 (1986); H. Nobuhara. 0. Wada, and T. Fujii; Electron. Lett. 23, 35 (1987)CrossRefGoogle Scholar
  23. [23]
    R. Nötzel, L. Däweritz, and K. Ploog, Phys. Rev. B46, 4736 (1992)Google Scholar
  24. [24]
    E.H.C. Parker (Ed.), The Technology and Physics of Molecular Beam Epitaxy (Plenum Press, New York, 1985); M.A. Herman and H. Sitter, Molecular Beam Epitaxy, Fundamentals and Current Status (Springer Verlag, Berlin, Heidelberg, 1989), Springer Ser. Mater. Sci., Vol. 7 (1989)Google Scholar
  25. [25]
    A.Y. Cho, J. Appl. Phys. 42, 2074 (1971)CrossRefGoogle Scholar
  26. [26]
    T. Sakamoto, H. Funabashi, K. Ohta, T. Nakagawa, N.J. Kawai, T. Kojima, and K. Bando, Superlatt. Microstruct. 1, 347 (1985)CrossRefGoogle Scholar
  27. [27]
    B.A. Joyce, P.J. Dobson, J.H. Neave, K. Woodbridge, J. Zhang, P.K. Larsen, and B. Bolger, Surf.Sci. 168, 423 (1986)CrossRefGoogle Scholar
  28. [28]
    B.A. Joyce, J. Zhang, J.H. Neave, and P.J. Dobson, Appl. Phys. A45, 255 (1988)Google Scholar
  29. [29]
    D.E. Aspnes, IEEE J. Quantum Electron. 0E-25, 1056 (1989)CrossRefGoogle Scholar
  30. [30]
    For a review on the first decade of MO VPE see: H.M. Manasevit, J. Cryst. Growth 55, 1 (1981)CrossRefGoogle Scholar
  31. [31]
    M.J. Ludowise, J. Appl. Phys. 58, R31 (1985)CrossRefGoogle Scholar
  32. [32]
    J.P. Duchemin, M. Bonnet, F. Koelsch, and D. Huyghe, J. Electrochem. Soc. 126, 1134 (1979)Google Scholar
  33. [33]
    M. Razeghi, The MO CVD Challenge (Adam Hilger, Bristol, 1989) Vol. 1 (1989)Google Scholar
  34. [34]
    A. Ishibashi, Y. Mori, M. Itabashi, and N. Watanabe, J. Appl. Phys. 58, 2691 (1985)CrossRefGoogle Scholar
  35. [35]
    N. Holonyak, Sov. Phys. Semicond. 19, 943 (1985)Google Scholar
  36. [36]
    R. Luckerath, P. Balk, M. Fischer, D. Grundmann, A. Hertling, and W. Richter, Chemitronics 2, 199 (1987)Google Scholar
  37. [37]
    M.E. Pemble, Chemitronics 2, 13 (1987)Google Scholar
  38. [38]
    T. Makimoto, Y. Yamauchi, N. Kobayashi, and Y. Horikoshi, Jap. J. Appl. Phys. 29, L207 (1990)CrossRefGoogle Scholar
  39. [39]
    M.B. Panish, J. Electrochem. Soc. 127, 2729 (1980)Google Scholar
  40. [40]
    E. Veuhoff, W. Pletschen, P. Balk, and H. Lüth, J. Cryst. Growth 55, 30 (1981)CrossRefGoogle Scholar
  41. [41]
    A. Robertson, T.H. Chiu, W.T. Tsang, and J.E. Cunningham, J. Appl. Phys. 64, 877 (1988); G.B. Stringfellow, Prog. Cryst. Growth Character. 19, 115 (1989); D.A. Andrews and G.H. Davies, J. Appl. Phys. 67, 3187 (1990); T. Martin, C.R. Whitehouse, and P.A. Lane, J. Cryst. Growth 120, 25 (1992); N.K. Singh, J.S. Foord, P.J. Skevington, and G.J. Davies, J. Cryst. Growth 120, 33 (1992)CrossRefGoogle Scholar
  42. [42]
    Y. Horikoshi and M. Kawashima, J. Cryst. Growth 95, 17 (1989)CrossRefGoogle Scholar
  43. [43]
    F. Briones, L. Gonzales, and A. Ruiz, Appl. Phys. A49, 729 (1989)Google Scholar
  44. [44]
    Y. Horikoshi, K. Kawashima, and H. Yamaguchi, Jap. J. Appl. Phys. 27, 169 (1988)CrossRefGoogle Scholar
  45. [45]
    M. Tsuchiya, J.M. Gaines, R.H. Yan, R.J. Simes, P.O. Holtz, L.A. Coldren, and P.M. Petroff, Phys. Rev. Lett. 62, 466 (1989); T. Fukui and H. Saito, Jpn. J. Appl. Phys. 29, L731 (1990)CrossRefPubMedGoogle Scholar
  46. [46]
    E. Kapon, D. Hwang, and R. Bhat, Phys. Rev. Lett. 63, 430 (1989)CrossRefPubMedGoogle Scholar
  47. [47]
    D. Gershoni, J.S. Weiner, S.N. Chu, G.A. Baraff, J.M. Vandenberg, L.N. Pfeiffer, K. West, R.A. Logan, and T. Tanbun-Ek, Phys. Rev. Lett. 65, 1631 (1990); K. Kash, B.P. v.d. Gaag, J.M. Worlock, A.S. Gozda, D.D. Mahoney, J.P. Harbison, and L.T. Florez, in: Localization and Confinement of Electrons in Semiconductors, Eds. F. Kuchar, H. Heinrich, and G. Bauer (Springer-Verlag, Berlin, Heidelberg, 1990), Springer Ser. Solid-State Sci., Vol. 97 (1990)CrossRefPubMedGoogle Scholar
  48. [48]
    E. Corcoran, Scientific American 263, 74 (1990)Google Scholar
  49. [49]
    O. Brandt, L. Tapfer, K. Ploog, R. Bierwolf, M. Hohenstein. F. Philipp, H. Lage, and A. Heberle, Phys. Rev. 44, 8043 (1991)Google Scholar
  50. [50]
    R. Nötzel, N.N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett 67, 3812 (1991); R. Nötzel, N.N. Ledentsov, L. Däweritz, and K. Ploog, Phys. Rev. B45, (1992)CrossRefPubMedGoogle Scholar

Copyright information

© Springer-Verlag 1993

Authors and Affiliations

  • Klaus H. Ploog
    • 1
  1. 1.Paul-Drude-Institut für FestkörperelektronikBerlinGermany

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