Abstract
In this work, we have proposed an L-shaped Dielectric Double Metal Dual-Gate TFET, which has been experimentally demonstrated and investigated for the first time. This structure offers several benefits over the conventional planar TFET in terms of reduced OFF-state current and hence suppressed ambipolar conduction. The source region has been extended in vertical direction for better tunneling at the source-channel interface. The material for the L-shaped oxide is varied and accordingly three structural variations have been simulated to obtain the optimized performance characteristics: (a) L-shaped HfO2-SiO2 Double Metal Dual-Gate TFET (LS-HS-DM-DG TFET: vertical portion has HfO2 and horizontal portion has SiO2), (b) L-shaped SiO2-HfO2 Double Metal Dual-Gate TFET (LS-SH-DM-DG TFET: vertical portion has SiO2 and horizontal portion has HfO2), and (c) L-shaped SiO2-SiO2 Double Metal Dual-Gate TFET (LS-SS-DM-DG TFET: total L-shape comprised of SiO2). All the fundamental device parameters have been analyzed to demonstrate the tunneling phenomena in the L-shaped Dielectric gate-engineered TFET structure under various biasing conditions. All the simulations have been performed in 2D using Silvaco, Atlas.
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Goswami, B., Bhowmick, S., Haldar, A., Paul, G., Basak, D., Sarkar, S.K. (2020). Implementation of L-Shaped Dielectric Double Metal Dual-Gate TFET Toward Improved Performance Characteristics and Reduced Ambipolarity. In: Mandal, J., Bhattacharya, K., Majumdar, I., Mandal, S. (eds) Information, Photonics and Communication. Lecture Notes in Networks and Systems, vol 79. Springer, Singapore. https://doi.org/10.1007/978-981-32-9453-0_3
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DOI: https://doi.org/10.1007/978-981-32-9453-0_3
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