Abstract
To observe effect of electron-hole exchange interaction on electron spin relaxation time, we performed polarization- and time-resolved PL measurements by using pnpn structured GaAs. This structure is supposed spatial distance between excited electrons and holes are changed by excitation power density. Prolongation of spin relaxation time was observed when excitation power density was weak and distance between electron and hole was long. The change of spin relaxation time attributable to the reduction of electron-hole exchange interaction in pnpn structure.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer Science+Business Media Singapore
About this paper
Cite this paper
Morozumi, A., Ito, T., Ichida, M., Ando, H. (2016). Observation of Electron Spin Relaxation Time in Pnpn Structured GaAs. In: Sontea, V., Tiginyanu, I. (eds) 3rd International Conference on Nanotechnologies and Biomedical Engineering. IFMBE Proceedings, vol 55. Springer, Singapore. https://doi.org/10.1007/978-981-287-736-9_42
Download citation
DOI: https://doi.org/10.1007/978-981-287-736-9_42
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-287-735-2
Online ISBN: 978-981-287-736-9
eBook Packages: EngineeringEngineering (R0)