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Observation of Electron Spin Relaxation Time in Pnpn Structured GaAs

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3rd International Conference on Nanotechnologies and Biomedical Engineering

Part of the book series: IFMBE Proceedings ((IFMBE,volume 55))

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Abstract

To observe effect of electron-hole exchange interaction on electron spin relaxation time, we performed polarization- and time-resolved PL measurements by using pnpn structured GaAs. This structure is supposed spatial distance between excited electrons and holes are changed by excitation power density. Prolongation of spin relaxation time was observed when excitation power density was weak and distance between electron and hole was long. The change of spin relaxation time attributable to the reduction of electron-hole exchange interaction in pnpn structure.

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Author information

Authors and Affiliations

  1. Research Institute of Electronics, Shizuoka University, Shizuoka, Japan

    A. Morozumi & T. Ito

  2. Department of Physics, Faculty of Science and Engineering, Konan University, Kobe, Japan

    M. Ichida & H. Ando

Authors
  1. A. Morozumi
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  2. T. Ito
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  3. M. Ichida
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  4. H. Ando
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Editor information

Editors and Affiliations

  1. Department Microelectronics and Biomedical Engineering, Technical University of Moldova, Chisinau, Moldova

    Victor Sontea

  2. Academy of Sciences of Moldova, Chisinau, Moldova

    Ion Tiginyanu

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© 2016 Springer Science+Business Media Singapore

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Cite this paper

Morozumi, A., Ito, T., Ichida, M., Ando, H. (2016). Observation of Electron Spin Relaxation Time in Pnpn Structured GaAs. In: Sontea, V., Tiginyanu, I. (eds) 3rd International Conference on Nanotechnologies and Biomedical Engineering. IFMBE Proceedings, vol 55. Springer, Singapore. https://doi.org/10.1007/978-981-287-736-9_42

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  • DOI: https://doi.org/10.1007/978-981-287-736-9_42

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-287-735-2

  • Online ISBN: 978-981-287-736-9

  • eBook Packages: EngineeringEngineering (R0)

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