Abstract
In this paper, we show that the quality of the porous layers produced by photoelectrochemical (PEC) etching of HVPE GaN in oxalic acid is better than that of the initial material, and the quality of GaN films overgrown on porous layers can be improved by adjusting the conditions of PEC etching during the preparation of porous layers. The better quality of the porous layers produced in HVPE material is indicated by the photoluminescence (PL) analysis which shows a higher intensity of the luminescence related to the recombination of free excitons as well as the intensity of the blue luminescence in the porous layers.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer Science+Business Media Singapore
About this paper
Cite this paper
Braniste, T. et al. (2016). The Impact of Porosification upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer upon the Quality of the Overgrown GaN Film. In: Sontea, V., Tiginyanu, I. (eds) 3rd International Conference on Nanotechnologies and Biomedical Engineering. IFMBE Proceedings, vol 55. Springer, Singapore. https://doi.org/10.1007/978-981-287-736-9_19
Download citation
DOI: https://doi.org/10.1007/978-981-287-736-9_19
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-287-735-2
Online ISBN: 978-981-287-736-9
eBook Packages: EngineeringEngineering (R0)