Abstract
The knowledge of the dynamics of intrinsic point defects, is essential for controlling and engineering their formation and clustering and thus also the quality of the germanium crystals used for producing germanium wafers for space solar cells and terrestrial concentrator photovoltaic, as well as of the active layer of germanium in complementary metal-oxide semiconductors technology. The analyses presented in this paper relate technological process parameters with microdefect formation in single crystal germanium.
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Notes
- 1.
The final values obtained from this fitting procedure cannot be reported in this paper because of confidentiality restrictions (the experimental data were supplied by Umicore Electro-Optic Materials).
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Acknowledgments
This study has been carried out as an industry research project, partly sponsored by Umicore Electro-Optic Materials. We thank this company for its financial support and for its valuable input to research. Part of this research was financially supported by the Polish Ministry of Science and Higher Education under contract no. N507011 31/0315, by the European Space Agency under ESTEC contract no. 19633/06/NL/GLC and by the Institute for the Promotion of Innovation by Science and Technology in Flanders (IWT-Vlaanderen). Currently ongoing research in this field is possible thank to the Polish National Science Centre under contract no. 2012/05/E/ST8/03104.
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Śpiewak, P., Vanhellemont, J., Kurzydłowski, K.J. (2016). Microdefects Modeling in Germanium Single Crystals. In: Udomkichdecha, W., Mononukul, A., Böllinghaus, T., Lexow, J. (eds) Materials for Energy Infrastructure. Springer, Singapore. https://doi.org/10.1007/978-981-287-724-6_11
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