Abstract
The discussion of the peculiarities of electromigration in Cu interconnects is continued in this chapter. It is shown that the interconnect texture is an important factor, governing the plastic response of Cu grains to the electrical current. The degree of the plastic response is proportional with the availability of 〈112〉 direction in Cu crystals along the direction of the current. Hence, (111) out-of-plane orientation of Cu grains increases the plastic effect of electromigration, while the presence of the grains with a different orientation could weaken it.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
Vanasupa L, Joo YC, Besser PR et al (1999) Texture analysis of damascene-fabricated Cu lines by x-ray diffraction and electron backscatter diffraction and its impact on electromigration performance. J Appl Phys 85:2583–2590
Budiman AS, Tamura N, Valek BC et al (2006) Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction. Appl Phys Lett 88:233515
Valek BC, Bravman JC, Tamura N et al (2002) Electromigration-induced plastic deformation in passivated metal lines. Appl Phys Lett 81:4168–4170
Valek BC, Tamura N, Spolenak R et al (2003) Early stage of plastic deformation in thin films undergoing electromigration. J Appl Phys 94:3757–3761
Budiman AS, Tamura N, Valek BC et al (2004) Materials, technology and reliability for advanced interconnects and low-k dielectrics. Mat Res Soc Proc 812:345–350
Budiman AS, Tamura N, Valek BC et al (2006) Electromigration-induced plastic deformation in Cu Damascene interconnect lines as revealed by synchrotron x-ray microdiffraction. Mat Res Soc Proc 0914-F06-01–0914-F06-05
Besser P, Zschech E, Blum W et al (2001) Microstructural characterization of inlaid copper interconnect lines. J Elec Matls 30:320–330
Lingk C, Gross ME, Brown WL (2000) Texture development of blanket electroplated copper films. J Appl Phys 87:2232–2236
Harper JM, Colgan EG, Hu CK et al (1994) Materials issues in copper interconnections. Mat Res Soc Bull 23:23–29
Besser PR, Sanchez JE, Field DP (1997) Proceedings of the advanced metallization and interconnect systems for ULSI applications in 1996, vol 89. Materials Research Society, Warrendale, PA
Lingk C, Gross ME, Brown WL, Siegrist T, Coleman E, Lai WY-C, Miner JF, Ritzdorf T, Turner J, Gibbons J, Klawuhn E, Wu G, Zhang F (1999) Advanced metallization conference in 1998 (AMC 1998), vol 73. Materials Research Society, Warrendale, PA
Lingk C, Gross ME, Brown WL (1999) X-ray diffraction pole figure evidence for (111) sidewall texture of electroplated Cu in submicron damascene trenches. Appl Phys Lett 74:682–684
Besser PR, Sanchez JE, Field DP, Pramanick S, Sahota K (1997) Advanced metallization for ULSI applications. Mat Res Soc Proc 473:217
Besser PR, Joo YC, Winter D et al (1999) Mechanical stresses in aluminum and copper interconnect lines for 0.18 µm logic technologies. Mat Res Soc Proc 563:189
Besser PR (1999) Stress-induced phenomena in metallization. In: AIP conference proceedings, vol 491, p 229
Zschech E, Besser PR (2000) Microstructure characterization of metal interconnects and barrier layers: status and future. In: Proceedings of the international interconnect technology conference, vol 233. p 235
Venkatasen S, Gelatos A, Misra V, Smith B, Islam R, Cope J, Wilson B, Tuttle D, Cardwell R, Anderson S, Angyal M, Bajaj R, Capasso C, Crabtree P, Das S, Farkas J, Fillipiak S, Fiordalice B, Freeman M, Gilbert P, Herrick M, Jain A, Kawasaki H, King C, Klein J, Lii T, Reid K, Saaranen T, Simpson C, Sparks T, Tsui P, Venkatraman R, Watts D, Wietzman E, Woodruff R, Yang I, Bhat N, Hamilton G, Yu Y (1997) In: IEEE International Electron Device Meeting Digest, vol 769. IEEE, Piscataway, NY)
Licata T, Okazaki M, Ronay M et al (1995) Dual damascene Al wiring for 256M DRAM. In: Proceedings of the VLSI multilevel interconnection conference
Sanchez JE, Besser PR (1998) Proceedings of the international interconnect technology conference, vol 233. IEEE, Piscataway, NY
Paik JM, Park KC, Joo YC (2004) Relationship between grain structures and texture of damascene Cu lines. J Elec Matls 33:48–52
Diebold A, Goodall RK (1999) Interconnect metrology roadmap: status and future. In: Proceedings of the international interconnect technology conference, San Francisco, 24–26 May 1999
Rhee SH, Du Y, Ho PS (2003) Thermal stress characteristics of Cu/oxide and Cu/low-k submicron interconnect structures. J Appl Phys 92:3926–3833
Paik JM, Park H, Joo YC et al (2005) Effect of dielectric materials on stress-induced damage modes in damascene Cu lines. J Appl Phys 97:104513
Fayolle M, Passemard G, Assous M et al (2002) Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect. Micoelectron Eng 60:119–124
Filippi RG et al (2004) Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric. In: 42nd annual IEEE international reliability physics symposium proceedings, pp 61–67
Shen YL (2006) Effects of dielectric thermal expansion and elastic modulus on the stress and deformation fields in copper interconnects. Mat Res Soc Proc 0914-F04-01–0914-F04-10
Tamura N, MacDowell AA, Spolenak BC et al (2003) Scanning x-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films. J Sync Rad 10:137–143
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2015 The Author(s)
About this chapter
Cite this chapter
Budiman, A.S. (2015). Electromigration-Induced Plasticity in Cu Interconnects: The Texture Dependence. In: Probing Crystal Plasticity at the Nanoscales. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-287-335-4_4
Download citation
DOI: https://doi.org/10.1007/978-981-287-335-4_4
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-287-334-7
Online ISBN: 978-981-287-335-4
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)