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RF Performance of Ultra-wide Bandgap HEMTs

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Emerging Trends in Terahertz Solid-State Physics and Devices

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Abstract

In the current scenario of high-speed electronics technology, many application areas—broadband Internet access, fifth-generation (4G/5G) mobile systems, and cutting-edge military applications—are realizing very-fast to reality. To cater these ever-increasing demands, radio-frequency (RF) and microwave power amplifiers are in prime-attention, and will be constantly evaluated on price versus performance metrics. Ultra-wide bandgap (UWBG) high electron mobility transistors (HEMTs) are promising candidates for switching power applications owing to very-high breakdown strength of the material. And higher values of energy band gap (Eg) and electron mobility enabled low on-resistance (RON) guarantees superior power handling capability. UWBG HEMTs having two-dimensional electron gas (2DEG) channel with high carrier concentration and high electron mobility are fast gaining space in high frequency and power switching applications. Also, these UWBG materials having large optical phonon energy, Eop ~92 meV (GaN), ~45 meV (β-Ga2O3) make them most suitable semiconductor materials for the imminent terahertz (THz, 1012 Hz) frequency applications: THz imaging and spectroscopy. In this paper, we present latest technological developments of the gallium nitride (GaN)- and beta-phase of gallium oxide (β-Ga2O3)-based HEMTs, with careful and quantitative investigation of their suitability toward radio frequency (RF), high power device applications, and THz emerging applications.

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Acknowledgements

This publication is an outcome of the R&D work undertaken by the project under the Visvesvaraya Ph.D. Scheme of Ministry of Electronics and Information Technology (MeitY), Govt. of India, being implemented by Digital India Corporation. Acknowledgement also goes to New Jersey Institute of Technology (NJIT), Newark, USA, for facilitating the visit of T. R. Lenka for collaborative research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    Rajan Singh & T. R. Lenka

  2. School of Electronics, VIT-AP University, Amaravati, Andhra Pradesh, 522237, India

    D. Panda

  3. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

    R. T. Velpula, B. Jain, H. Q. T. Bui & H. P. T. Nguyen

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  1. Rajan Singh
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Correspondence to T. R. Lenka .

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Editors and Affiliations

  1. School of Mines and Metallurgy, Kazi Nazrul University, Asansol, West Bengal, India

    Arindam Biswas

  2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore

    Amit Banerjee

  3. Department of Electronics and Communication, Cooch Behar Government Engineering College, Cooch Behar, West Bengal, India

    Aritra Acharyya

  4. Research Institute of Electronics, Shizuoka University, Shizuoka, Japan

    Hiroshi Inokawa

  5. Department of Physics, Kazi Nazrul University, Asansol, West Bengal, India

    Jintendra Nath Roy

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Singh, R. et al. (2020). RF Performance of Ultra-wide Bandgap HEMTs. In: Biswas, A., Banerjee, A., Acharyya, A., Inokawa, H., Roy, J. (eds) Emerging Trends in Terahertz Solid-State Physics and Devices. Springer, Singapore. https://doi.org/10.1007/978-981-15-3235-1_4

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