Abstract
In this paper, the effects of applied voltage, temperature and structural parameters of MPS diodes on the reverse leakage current of these diodes are studied. A new analytical model for merged PiN Schottky (MPS) diodes is also developed to analyze and predict the reverse characteristics of these diodes. The model of the surface electric field is approximately solved by using the 2D Poisson equation. The reverse leakage current model of MPS diodes is analyzed and solved from the four parts of the thermionic emission, namely the leakage, tunneling, depletion and diffusion currents, based on the surface electric field model. The validated model and experimental results show good agreement.
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Acknowledgements
This work is supported by the National Natural Science Foundation of China under (No.51307113) and Natural Science Foundation of Jiangsu Province (No.BK20130307). Xuehui Tao is the corresponding author.
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Du, Q., Tao, X. (2020). Reverse Characteristic Model of SiC MPS Diode. In: Jia, L., Qin, Y., Liu, B., Liu, Z., Diao, L., An, M. (eds) Proceedings of the 4th International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2019. EITRT 2019. Lecture Notes in Electrical Engineering, vol 638. Springer, Singapore. https://doi.org/10.1007/978-981-15-2862-0_7
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DOI: https://doi.org/10.1007/978-981-15-2862-0_7
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