Abstract
Heterostructures n-MoOx/p-Cd3In2Te6 were manufactured by sputtering a thin film MoOx (n-type) onto Cd3In2Te6 substrates (p-type) by the method of reactive magnetron sputtering. I–V-characteristics of the structure were investigated in the temperature range 288–373 K. It is established that they have a straightening character. The height of the potential barrier φ0 varies from 0.34 to 0.09 eV, and the rectifying ratio RR is from 900 to 16 with increasing temperature. Investigation of current transfer mechanisms under direct inclusions showed that the generation and recombination process of current transfer dominates, and in the reverse inclusion, the tunneling mechanism of transport of charge carriers through a potential barrier is dominant.
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Koziarskyi, I.P., Maistruk, E.V., Koziarskyi, D.P., Mostovyi, A.I., Sydor, O.M., Potsiluiko-Hryhoriak, H.V. (2020). Electrical Properties of Heterojunction n-MoOx/p-Cd3In2Te6. In: Pogrebnjak, A., Bondar, O. (eds) Microstructure and Properties of Micro- and Nanoscale Materials, Films, and Coatings (NAP 2019). Springer Proceedings in Physics, vol 240. Springer, Singapore. https://doi.org/10.1007/978-981-15-1742-6_2
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