Abstract
We have developed a ferroelectric-gate field-effect transistor (FeFET) composed of heteroepitaxially stacked oxide materials. A semiconductor film of ZnO, a ferroelectric film of Pb(Zr,Ti)O3 (PZT), and a bottom-gate electrode of SrRuO3 (SRO) are grown on a SrTiO3 substrate. Structural characterization shows a heteroepitaxy of the fabricated ZnO/PZT/SRO/STO structure with a good crystalline quality and absence of an interface reaction layer. When gate voltages applied to the bottom electrode are swept between −10 V and +10 V, the ON/OFF ratio of drain currents is higher than 105. Such a high ratio is preserved even after 3.5 months; the extrapolation of retention behavior predicts a definite memory window over 10 years. We also switched FeFET channel conductance by applying short pulses to a gate electrode and found that the switching of the FeFET is due to domain wall motion in a ferroelectric film. Polarization reversal starts from a region located under source and drain electrodes and travels along the direction of channel length. In addition, domain wall velocity increases as the domain wall gets closer to the source and drain electrodes in the ferroelectric film. Therefore, the FeFET has the merit of high operation speeds at scale. Then, we demonstrate a 60-nm-channel-length FeFET. The drain current ON/OFF ratio was about three orders of magnitude for write pulse widths as narrow as 10 ns. Although the channel length is set at 60 nm, the conductance can be varied continuously by varying the write pulse width.
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K. Tanaka, Y. Cho, Actual information storage with a recording density of 4 Tbit/in.(2) in a ferroelectric recording medium. Appl. Phys. Lett. 97, 092901 (2010)
K. Tanaka et al., Scanning nonlinear dielectric microscopy nano-science and technology for next generation high density ferroelectric data storage. Jpn. J. Appl. Phys. 47, 3311–3325 (2008)
W. Shu-Yau, A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor. IEEE Trans. Electron Devices 21, 499–504 (1974)
M. Alexe, Measurement of interface trap states in metal-ferroelectric-silicon heterostructures. Appl. Phys. Lett. 72, 2283–2285 (1998)
G. Hirooka et al., Proposal for a new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction. Jpn. J. Appl. Phys. Part 1-Regul. Pap. Short Notes Rev. Pap. 43, 2190–2193 (2004)
S. Sakai, R. Ilangovan, Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance. IEEE Electron Device Lett. 25, 369–371 (2004)
E. Tokumitsu et al., Use of ferroelectric gate insulator for thin film transistors with ITO channel. Microelectr. Eng. 80, 305–308 (2005)
K. Takahashi et al., Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers. Jpn. J. Appl. Phys. Part 1-Regul. Pap. Brief Commun. Rev. Pap. 44, 6218–6220 (2005)
M. Takahashi, S. Sakai, Self-aligned-gate metal/ferroelectric/insulator/semiconductor field-effect transistors with long memory retention. Jpn. J. Appl. Phys. Part 2-Lett. Exp. Lett. 44, L800–L802 (2005)
B.Y. Lee et al., Fabrication and characterization of ferroelectric gate field-effect transistor memory based on ferroelectric-insulator interface conduction. Jpn. J. Appl. Phys. Part 1-Regul. Pap. Brief Commun. Rev. Pap. 45, 8608–8610 (2006)
Q.H. Li, S. Sakai, Characterization of Pt/SrBi2Ta2O9/Hf-Al-O/Si field-effect transistors at elevated temperatures. Appl. Phys. Lett. 89 (2006)
H. Ishiwara, Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors. Current Appl. Phys. 9, S2–S6 (2009)
S. Yokoyama et al., Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr∕(Zr + Ti) ratio. J. Appl. Phys. 98, 094106 (2005)
Ü. Özgür et al., A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301 (2005)
J.W. Matthews, A.E. Blakeslee, Defects in epitaxial multilayers. I. Misfit dislocations. J. Cryst. Growth, 27, 118 (1974)
Z.K. Tang et al., Self-assembled ZnO nano-crystals and exciton lasing at room temperature. J. Cryst. Growth 287, 169–179 (2006)
E.M.C. Fortunato et al., Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature. Appl. Phys. Lett. 85, 2541–2543 (2004)
P.F. Carcia et al., Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl. Phys. Lett. 82, 1117–1119 (2003)
A. Tsukazaki et al., Quantum hall effect in polar oxide heterostructures. Science 315, 1388–1391 (2007)
N. Tsuda et al., Electronic Conduction in Oxides, 2nd ed. (Shokabo, 1993)
B.L. Zhu et al., Effect of Thickness on the Structure and Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition. Jpn. J. Appl. Phys. 45, 7860 (2006)
E. Bellingeri et al., High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer. Appl. Phys. Lett. 86, 012109 (2005)
Y. Ishibashi, Y. Takagi, Note on Ferroelectric Domain Switching. J. Phys. Soc. Jpn, 31, 506 (1971)
J.F. Scott et al., Switching kinetics of lead zirconate titanate submicron thin-film memories. J. Appl. Phys. 64, 787–792 (1988)
T. Tybell et al., Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films. Phys. Rev. Lett. 89, 097601 (2002)
Y.-H. Shin et al., Nucleation and growth mechanism of ferroelectric domain-wall motion. Nature, 449, 881–884 (2007)
E. Tokumitsu et al., Partial switching kinetics of ferroelectric PbZrxTi1-xO3 thin films prepared by sol-gel technique. Jpn. J. Appl. Phys. 33, 5201 (1994)
J.Y. Jo et al., Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxT1−x)O3 thin films. Appl. Phys. Lett. 92, 012917-3 (2008)
T. Fukushima et al., Impedance analysis of controlled-polarization-type ferroelectric-gate thin film transistor using resistor–capacitor lumped constant circuit. Jpn. J. Appl. Phys. 50, 04DD16 (2011)
J. Li et al., Ultrafast polarization switching in thin-film ferroelectrics. Appl. Phys. Lett. 84, 1174–1176 (2004)
H. Ishii et al., Ultrafast polarization switching in ferroelectric polymer thin films at extremely high electric fields. Appl. Phys. Express 4, 031501 (2011)
Y. Cho, Ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy. Jpn. J. Appl. Phys. 44, 5339 (2005)
H. Tanaka et al., A ferroelectric gate field effect transistor with a ZnO/Pb(Zr,Ti)O3 heterostructure formed on a silicon substrate. Jpn. J. Appl. Phys. 47, 7527–7532 (2008)
Y. Kaneko et al., NOR-type nonvolatile ferroelectric-gate memory cell using composite oxide technology. Jpn. J. Appl. Phys. 48, 09ka19 (2009)
Y. Kaneko et al., A dual-channel ferroelectric-gate field-effect transistor enabling nand-type memory characteristics. IEEE Trans. Electron Devices 58, 1311–1318 (2011)
M. Ueda et al., A neural network circuit using persistent interfacial conducting heterostructures. J. Appl. Phys. 110, 086104-3 (2011)
Y. Nishitani et al., Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks. J. Appl. Phys. 111, 124108-6 (2012)
Y. Kaneko et al., Neural network based on a three-terminal ferroelectric memristor to enable on-chip pattern recognition, in 2013 Symposium on VLSI Technology (VLSIT) (2013), pp. T238–T239
Y. Nishitani et al., Dynamic observation of brain-like learning in a ferroelectric synapse device. Jpn. J. Appl. Phys. 52, 04CE06 (2013)
Y. Kaneko et al., Ferroelectric artificial synapses for recognition of a multishaded image. IEEE Trans. Electron Devices 61, 2827–2833 (2014)
Y. Nishitani et al., Supervised learning using spike-timing- dependent plasticity of memristive synapses. IEEE Trans. Neural Netw. Learn. Syst. (accepted)
M. Ueda et al., Battery-less shock-recording device consisting of a piezoelectric sensor and a ferroelectric-gate field-effect transistor. Sens. Actuators A: Phys. 232, 75–83 (2015)
Y. Kato et al., Nonvolatile memory using epitaxially grown composite-oxide-film technology. Jpn. J. Appl. Phys. 47, 2719–2724 (2008)
Y. Kaneko et al., Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure. J. Appl. Phys. 110, 084106-7 (2011)
Y. Kaneko et al., A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming. Appl. Phys. Lett. 99, 182902-3 (2011)
Acknowledgements
We would like to thank Yu Nishitani, Hiroyuki Tanaka, Michihito Ueda, Atsushi Omote, Ayumu Tsujimura, Eiji Fujii, Yoshihisa Kato, Yasuhiro Shimada, Daisuke Ueda, and Eisuke Tokumitsu for valuable discussions and excellent experimental assistance.
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Kaneko, Y. (2020). ZnO/Pb(Zr,Ti)O3 Gate Structure Ferroelectric FETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_7
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DOI: https://doi.org/10.1007/978-981-15-1212-4_7
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