Abstract
Downsizing process of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si ferroelectric-gate field-effect transistors (FeFETs) were reviewed. Self-aligned-gate process was applied for developing the FeFETs. We measured memory windows, endurances, and retentions of the self-aligned-gate FeFETs carefully in order to confirm that they showed as good quality as the conventional non-self-aligned-gate FeFETs using the same materials and thicknesses in the gate stacks. In this work, high-quality FeFETs with metal gate lengths from sub-micron to 100 nm were introduced with measured evidences of the high endurances over 108 cycles and the long stable retentions for at least 105 s.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Y. Tarui, T. Hirai, K. Teramoto, H. Koike, K. Nagashima, Appl. Surf. Sci. 113–114, 656 (1997)
C.A. Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott, Nature (London) 374, 627 (1995)
Y. Noguchi, H. Shimizu, M. Miyayama, K. Oikawa, T. Kamiyama, Jpn. J. Appl. Phys. 40, 5812 (2001)
R.R. Das, P. Bhattacharya, W. Perez, R.S. Katiyar, S.B. Desu, Appl. Phys. Lett. 80, 637 (2002)
R.R. Das, P. Bhattacharya, W. Perez, R.S. Katiyar, Jpn. J. Appl. Phys. 42, 163 (2003)
AIST press release on October 24, 2002
S. Sakai, R. Ilangovan, IEEE Electron Devices Lett. 25, 369 (2004)
S. Sakai, M. Takahashi, R. Ilangovan, IEDM Tech. Dig. 915 (2004)
S. Sakai, R. Ilangovan, M. Takahashi, in Extended Abstracts of 2004 International Workshop on Dielectric Thin Films For Future ULSI Devices Science and Technology (IWDTF 2004), Tokyo (2004), pp. 55–56
S. Sakai, R. Ilangovan, M. Takahashi, Jpn. J. Appl. Phys. 43, 7876 (2004)
AIST press release on December 15, 2004
M. Takahashi, S. Sakai, Jpn. J. Appl. Phys. 44, L800 (2005)
Q.-H. Li, S. Sakai, Appl. Phys. Lett. 89, 222910 (2006)
M. Takahashi, T. Horiuchi, S. Wang, Q.-H. Li, S. Sakai, J. Vac. Sci. Technol. B 26, 1585 (2008)
Q.-H. Li, T. Horiuchi, S. Wang, M. Takahashi, S. Sakai, Semicond. Sci. Technol. 24, 025012 (2009)
T. Horiuchi, M. Takahashi, K. Ohhashi, S. Sakai, Semicond. Sci. Technol. 24, 105026 (2009)
T. Horiuchi, M. Takahashi, Q.-H. Li, S. Wang, S. Sakai, Semicond. Sci. Technol. 25, 055005 (2010)
L.V. Hai, M. Takahashi, S. Sakai, Semicond. Sci. Technol. 25, 115013 (2010)
L.V. Hai, M. Takahashi, S. Sakai, in Proceedings of 2011 Materials Research Society (MRS), 1337, Symposium Q—New Functional Materials and Emerging Device Architectures for Nonvolatile Memories, mrss11-1337-q02-02 (2011)
L.V. Hai, M. Takahashi, S. Sakai, in Proceedings of 3rd IEEE International Memory Workshop (2011), p. 175
W. Zhang, M. Takahashi, S. Sakai, Semicond. Sci. Technol. 28, 085003 (2013)
L.V. Hai, M. Takahashi, W. Zhang, S. Sakai, in Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, Tsukuba (2014), p. 434
L.V. Hai, M. Takahashi, W. Zhang, S. Sakai, Semicond. Sci. Technol. 30, 015024 (2015)
L.V. Hai, M. Takahashi, W. Zhang, S. Sakai, Jpn. J. Appl. Phys. 54, 088004 (2015)
S. Sakai, M. Takahashi, K. Motohashi, Y. Yamaguchi, N. Yui, T. Kobayashi, J. Vac. Sci. Technol. A 25, 903 (2007)
Acknowledgements
The authors thank Dr. Le Van Hai and the other staffs for their diligent working.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Takahashi, M., Sakai, S. (2020). Downsizing of High-Endurance and Long-Retention Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_3
Download citation
DOI: https://doi.org/10.1007/978-981-15-1212-4_3
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-15-1211-7
Online ISBN: 978-981-15-1212-4
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)