Applications of Oxide-Channel Ferroelectric-Gate Thin-Film Transistors

Abstract

In this chapter, recent topics on oxide-channel ferroelectric-gate transistors were presented. First, nonvolatile memory circuit application of ferroelectric-gate transistors is discussed by comparing it with Flash memory. It is pointed out that “read disturb” may become serious in the memory circuits using ferroelectric-gate transistors in contrast to Flash memory. To solve the read disturb problem, two-transistor memory cell structures are presented for both NAND and NOR configurations. In NAND configuration, one memory cell consists of parallel connection of a memory transistor and a pass transistor, whereas one memory cell consists of series connection of a memory transistor and a cut-off transistor in NOR configuration. Next, two-transistor cell NAND memory arrays using oxide-channel ferroelectric-gate transistors for both memory and pass transistors have been fabricated. It is confirmed that the stored “off” data in unselected cells remain almost intact during the readout procedures of a selected cell. Next, solution process is demonstrated to fabricate oxide-channel ferroelectric-gate transistors. All-oxide, all-solution-processed ferroelectric-gate transistors are demonstrated. In addition, newly developed nano-rheology printing (n-RP) technology, which utilizes direct nanoimprint of oxide gel films, is used to fabricate oxide-channel ferroelectric thin-film transistors without using conventional lithography process.