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Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

In this chapter, various applications based on pyroelectricity of antiferroelectrics and relaxor ferroelectrics are presented from the material’s point of view. While the pyroelectricity of the conventional antiferroelectric materials, such as PbZrO3, has been reported from the 1960s, the pyroelectricity of antiferroelectric HfxZr1−xO2 (x = 0.1–0.4) thin films was first reported in 2014. The antiferroelectric HfxZr1−xO2 (x = 0.1–0.4) thin films are believed to be highly promising for various applications, including electrostatic energy storage, electrocaloric cooling, pyroelectric energy harvesting, and infrared sensing. The theoretical background and basic operation principles of these energy-related applications will be briefly presented in the introduction. In this chapter, the material properties of only these new antiferroelectric thin films are dealt with because those of the conventional materials have been reported extensively elsewhere. In Sects. 17.2–17.5, the performance of HfxZr1−xO2 thin films in the aforementioned applications will be presented, and the performance of HfxZr1−xO2 films will also be compared with that of the conventional antiferroelectric and relaxor ferroelectric materials. In Sect. 17.6, the perspectives of antiferroelectric HfO2-based films in the aforementioned applications will be presented, with focus on the recently suggested future multifunctional monolithic device.

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Acknowledgements

This work was supported by the Global Research Laboratory Program (2012K1A1A2040157) of the Ministry of Science, ICT, and Future Planning of the Republic of Korea, and by a National Research Foundation of Korea (NRF) grant funded by the South Korean government (MSIP) (2014R1A2A1A10052979).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Pusan National University, Busandaehak-ro-63-beon-gil 2, Busan, 46241, South Korea

    Min Hyuk Park

  2. Department of Materials Science and Engineering, Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 151-744, South Korea

    Cheol Seong Hwang

Authors
  1. Min Hyuk Park
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  2. Cheol Seong Hwang
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Correspondence to Cheol Seong Hwang .

Editor information

Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Park, M.H., Hwang, C.S. (2020). Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_17

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