Abstract
A simulation study of the gain effect of solid-state impact ionization multipliers (SIMs) is reported. The SIM device separates the absorption and multiplication regions and is an alternative to avalanche photodiodes (APDs) used in LiDARs. The effects of geometric structures on electric field and potential distributions are simulated and studied. The optimized geometric structure increases the gain to around 270 at the voltage of 60 V. Based on this simulation, an optimized structure is proposed for future device fabrication.
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Acknowledgements
This work was supported in part by the Shenzhen Fundamental Research fund under Grant No. JCYJ20170306100015508.
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Geng, Y., Li, Q., Qiu, W. (2020). Simulation of Gain Effect of Solid-State Impact Ionization Multipliers. In: Jain, V., Patnaik, S., Popențiu Vlădicescu, F., Sethi, I. (eds) Recent Trends in Intelligent Computing, Communication and Devices. Advances in Intelligent Systems and Computing, vol 1006. Springer, Singapore. https://doi.org/10.1007/978-981-13-9406-5_46
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DOI: https://doi.org/10.1007/978-981-13-9406-5_46
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