Abstract
In this study, photosensitive organic field-effect transistors (PhOFETs) based on palladium phthalocyanine (PdPc) active layer with different thickness were fabricated and characterized. The photoelectric measurement results demonstrated that the device with 46.7-nm-thick PdPc film exhibited the best photoresponsivity of 1.47 mA/W and the maximum saturation field-effect mobility of 1.88 × 10−3 cm2/Vs in all devices. In addition, for drain voltage Vd = −50 V and gate voltage Vg = −50 V, the device photosensitivity of 20-nm-thick PdPc film reached a maximum at 5.77 compared with other devices in the same condition. Herein, we assumed that the different characteristics with a series thickness were dependent on the grain size and contact resistances in PdPc films. For which the grain size in PdPc films increased to a certain thickness around 46.7 nm and exhibited improved PhOFETs performances. Hereafter, the performance declined due to increasing contact resistances with thickness.
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Acknowledgements
This work was supported by National Key R&D Program of China Grant No. 2016YFF0203605 and the Natural Science Foundation of Zhejiang Province Grant No. LY18F050009.
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Zhou, J., Lv, W., Xu, S., Peng, Y. (2020). Thickness-Dependent Performance of Photosensitive Organic Field-Effect Transistors Based on Palladium Phthalocyanine. In: Peng, Y., Dong, X. (eds) Proceedings of 2018 International Conference on Optoelectronics and Measurement. Lecture Notes in Electrical Engineering, vol 567. Springer, Singapore. https://doi.org/10.1007/978-981-13-8595-7_23
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