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Bismuth-Containing Alloys and Nanostructures pp 163–179Cite as

Dilute Bismuthides on InP Substrates: From Materials to Devices

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

Abstract

Dilute bismuthides, achieved by incorporating a small amount of bismuth (Bi) into conventional III–V semiconductors, have drawn extensive attention as a class of novel material for various promising applications ranging from optoelectronics to thermoelectrics due to their interesting properties such as band gap reduction, strong spin–orbit coupling, relatively weak temperature sensitivity, etc. This chapter focuses on the study of dilute bismuthides on InP substrates: InGaBiAs and InPBi. MBE growth conditions, material morphology and properties (especially electrical and optical properties), and the related potential applications will be discussed, as will the band gap narrowing and the band anticrossing (BAC) model.

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Authors and Affiliations

  1. Department of Material Science and Engineering, University of Delaware, Newark, DE, 19716, USA

    Jing Zhang, Yuejing Wang & Joshua M. O. Zide

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  1. Jing Zhang
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  2. Yuejing Wang
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Correspondence to Joshua M. O. Zide .

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Editors and Affiliations

  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Shumin Wang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

    Pengfei Lu

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Zhang, J., Wang, Y., Zide, J.M.O. (2019). Dilute Bismuthides on InP Substrates: From Materials to Devices. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_7

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