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GaSbBi Alloys and Heterostructures: Fabrication and Properties

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Bismuth-Containing Alloys and Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

Abstract

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into antimonide-based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2–5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

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Acknowledgements

The work at the University of Montpellier was partly supported by the French program “Investments for the Future” (EXTRA, ANR-11-EQPX-0016) and the National Research Agency (BIOMAN, ANR-15-CE24-0001).

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Authors and Affiliations

  1. CNRS, IES, University of Montpellier, 34000, Montpellier, France

    O. Delorme, L. Cerutti, E. Tournié & J.-B. Rodriguez

  2. Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland

    R. Kudrawiec, J. Kopaczek & M. Gladysiewicz

  3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    Esperanza Luna & A. Trampert

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    Shumin Wang

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Delorme, O. et al. (2019). GaSbBi Alloys and Heterostructures: Fabrication and Properties. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_6

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