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Epitaxial Growth of Bi2X3 Topological Insulators

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Bismuth-Containing Alloys and Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

Abstract

Tetradymite-type Bi2X3 (X = Se, Te, Sb) systems have been used as the best thermoelectric materials for decades. Recently, such V-VI compound materials have attracted immense interests because they are identified as topological insulators with salient features associated with the unique topological surface states. In this chapter, we review the use of molecular beam epitaxy technique to achieve single-crystalline Bi2X3 thin films with atomically smooth surface and extremely low-defect density. In particular, we will explore the unique van der Waals epitaxy growth mechanism, providing detailed discussions on the choice of key growth procedures and parameters during the MBE growth. Furthermore, we will introduce advanced growth techniques such as functional doping and structural engineering so that the functionalities can be further multiplied. Finally, we will give an outlook on Bi2X3-based materials system for exploring new physics and device applications.

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Acknowledgements

This work is supported in part by the FAME Center, one of the six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. We also gratefully acknowledge the financial support from the National Key R&D Program of China, under contract numbers 2017YFB0405704 and 2017YFA0305400. X.F.K. acknowledges the support from the 1000-Young Talent Program of China and the Shanghai Sailing Program under contract number 17YF1429200.

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  1. School of Information Science and Technology, ShanghaiTech University, Shanghai, China

    Xufeng Kou

  2. Department of Electrical Engineering, University of California, Los Angeles, USA

    Kang L. Wang

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  1. Xufeng Kou
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  2. Kang L. Wang
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Correspondence to Xufeng Kou .

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  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Shumin Wang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

    Pengfei Lu

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Kou, X., Wang, K.L. (2019). Epitaxial Growth of Bi2X3 Topological Insulators. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_14

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