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Bismuth-Containing Alloys and Nanostructures pp 299–318Cite as

Dilute Bismide Photodetectors

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

Abstract

Dilute bismide III-V semiconductors have many unique properties and have been extensively investigated in recent decades. As the development of material research has progressed, some promising dilute bismide devices have been explored. Incorporation of a small amount of Bi in III-V host materials results in a large band-gap narrowing, which makes dilute bismides potential candidates in long-wavelength photodetectors. In this chapter, we review recent progress on GaAsBi, InAsBi, InSbBi, and InGaAsBi photodetectors, as well as GaAsBi and InGaAsBi THz photoconductive detectors. Some preliminary demonstrations and detector properties have been reported on these dilute bismide photodetectors, while the material quality still needs to be improved and the specific detector properties of dilute bismides still need more understanding.

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Acknowledgements

The authors would like to thank Prof. C. H. Tan and Mr. Thomas Rockett from The University of Sheffield for beneficial discussion. The authors also would like to acknowledge the National Key Research and Development Program of China (Nos. 2017YFB0405300 and 2016YFB0402400), the National Natural Science Foundation of China (Nos. 61775228, 61675225, 61605232), and the Shanghai Rising-Star Program (No. 17QA1404900) for financial supports. The work of RDR was supported by the Royal Academy of Engineering under the Research Fellowships scheme.

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Authors and Affiliations

  1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Yi Gu & Yonggang Zhang

  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Yi Gu & Yonggang Zhang

  3. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, UK

    Robert D. Richards & John P. R. David

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  1. Yi Gu
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  4. Yonggang Zhang
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Correspondence to Yi Gu .

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Editors and Affiliations

  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Shumin Wang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

    Pengfei Lu

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Gu, Y., Richards, R.D., David, J.P.R., Zhang, Y. (2019). Dilute Bismide Photodetectors. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_13

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