Abstract
This chapter discusses and presents different designs to screen the polarization level in the quantum wells for [0001]-oriented DUV LEDs. By doing so, the quantum confined Stark effect (QCSE) can be decreased. We suggest a simple way to reduce the QCSE by adopting Si-doped quantum barriers. Meanwhile, we also find that DUV LEDs are very sensitive to the polarization polarity, such that if nonpolar, semipolar and nitrogen-polar DUV LED structures are grown, we shall avoid using the p-AlGaN/p-GaN hole injection layer. The p-AlGaN/p-GaN hole injection layer can have remarkably hole depletion effect at the interface for those growth orientations except the [0001] orientation.
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References
Li X, Sundaram S, Disseix P, Le Gac G, Bouchoule S, Patriarche G, Reveret F, Leymarie J, El Gmili Y, Moudakir T, Genty F, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A (2015) AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Opt Mater Express 5(2):380–392. https://doi.org/10.1364/ome.5.000380
Tian K, Chen Q, Chu C, Fang M, Li L, Zhang Y, Bi W, Chen C, Zhang Z-H, Dai J (2018) Investigations on AlGaN-based deep-ultraviolet light-emitting diodes with Si-doped quantum barriers of different doping concentrations. Physica Status Solidi-Rapid Res Lett 12(1):1700346. https://doi.org/10.1002/pssr.201700346
Li L, Miyachi Y, Miyoshi M, Egawa T (2016) Enhanced emission efficiency of deep ultraviolet light-emitting AlGaN multiple quantum wells grown on an n-AlGaN underlying layer. IEEE Photonics J 8(5):1–10. https://doi.org/10.1109/JPHOT.2016.2601439
Akaike R, Ichikawa S, Funato M, Kawakami Y (2018) AlxGa1–xN-based semipolar deep ultraviolet light-emitting diodes. Appl Phys Express 11, Jun 2018
Zhang Z-H, Zhang Y, Bi W, Demir HV, Sun XW (2016) On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates. Phys Status Solidi (a) 213(12):3078–3102. https://doi.org/10.1002/pssa.201600281
Wang L, Jin J, Mi C, Hao Z, Luo Y, Sun C, Han Y, Xiong B, Wang J, Li H (2017) A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes. Materials 10(11):1233. https://doi.org/10.3390/ma10111233
Tian K, Chu C, Shao H, Che J, Kou J, Fang M, Zhang Y, Bi W, Zhang Z-H (2018) On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes. Superlattices Microstruct 122:280–285. https://doi.org/10.1016/j.spmi.2018.07.037
Zhang Z-H, Li L, Zhang Y, Xu F, Shi Q, Shen B, Bi W (2017) On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes. Opt Express 25(14):16550–16559. https://doi.org/10.1364/OE.25.016550
Zhang Z-H, Chen S-WH, Zhang Y, Li L, Wang S-W, Tian K, Chu C, Fang M, Kuo H-C, Bi W (2017) Hole transport manipulation to improve the hole injection for deep ultraviolet light-emitting diodes. ACS Photonics 4(7):1846–1850. https://doi.org/10.1021/acsphotonics.7b00443
Zhang Z-H, Zhang Y, Bi W, Geng C, Xu S, Demir HV, Sun XW (2016) On the hole accelerator for III-nitride light-emitting diodes. Appl Phys Lett 108(15):071101. https://doi.org/10.1063/1.4947025
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Zhang, ZH., Chu, C., Tian, K., Zhang, Y. (2019). Screen the Polarization Induced Electric Field Within the MQWs for DUV LEDs. In: Deep Ultraviolet LEDs. SpringerBriefs in Applied Sciences and Technology(). Springer, Singapore. https://doi.org/10.1007/978-981-13-6179-1_6
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DOI: https://doi.org/10.1007/978-981-13-6179-1_6
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