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Improve the Current Spreading for DUV LEDs

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Abstract

After the crystalline quality for Al-rich AlGaN layer is significantly improved, it is then the time to design novel DUV LED structures. DUV LEDs are driven electrically which get carrier transport and current injection involved. One of the challenges is the current crowding effect, which easily occurs in the DUV LEDs. Hence, it is important to show people physical images on the underlying reason for the current crowding and the solution proposals for current spreading.

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References

  1. Ryu H-Y, Choi I-G, Choi H-S, Shim J-I (2013) Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl Phys Express 6(6):062101. https://doi.org/10.7567/APEX.6.062101

    Article  CAS  Google Scholar 

  2. Maeda N, Hirayama H (2013) Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer. Phys Status Solidi C 10(11):1521–1524. https://doi.org/10.1002/pssc.201300278

    Article  CAS  Google Scholar 

  3. Katsuragawa M, Sota S, Komori M, Anbe C, Takeuchi T, Sakai H, Amano H, Akasaki I (1998) Thermal ionization energy of Si and Mg in AlGaN. J Cryst Growth 189:528–531. https://doi.org/10.1016/S0022-0248(98)00345-5

    Article  Google Scholar 

  4. Schubert EF (2006) Light-emitting diodes, 2nd edn. Cambridge University Press

    Google Scholar 

  5. Guo X, Schubert EF (2001) Current crowding in GaN/InGaN light emitting diodes on insulating substrates. J Appl Phys 90(8):4191–4195. https://doi.org/10.1063/1.1403665

    Article  CAS  Google Scholar 

  6. Hao GD, Taniguchi M, Tamari N, Inoue S (2016) Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures. J Phys D-Appl Phys 49(23):235101. https://doi.org/10.1088/0022-3727/49/23/235101

    Article  CAS  Google Scholar 

  7. Hao GD, Taniguchi M, Tamari N, Inoue S (2018) Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes. J Phys D-Appl Phys 51(3):035103. https://doi.org/10.1088/1361-6463/aa9e0e

    Article  CAS  Google Scholar 

  8. Hrong RH, Zeng YY, Wang WK, Tsai CL, Fu YK, Kuo WH (2017) Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes. Opt Express 25(25):32206–32213. https://doi.org/10.1364/OE.25.032206

    Article  CAS  Google Scholar 

  9. Kim KH, Fan ZY, Khizar M, Nakarmi ML, Lin JY, Jiang HX (2004) AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers. Appl Phys Lett 85(20):4777–4779. https://doi.org/10.1063/1.1819506

    Article  CAS  Google Scholar 

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Correspondence to Zi-Hui Zhang .

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Zhang, ZH., Chu, C., Tian, K., Zhang, Y. (2019). Improve the Current Spreading for DUV LEDs. In: Deep Ultraviolet LEDs. SpringerBriefs in Applied Sciences and Technology(). Springer, Singapore. https://doi.org/10.1007/978-981-13-6179-1_3

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  • DOI: https://doi.org/10.1007/978-981-13-6179-1_3

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-6178-4

  • Online ISBN: 978-981-13-6179-1

  • eBook Packages: EngineeringEngineering (R0)

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