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Increase the IQE by Improving the Crystalline Quality for DUV LEDs

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Deep Ultraviolet LEDs

Part of the book series: SpringerBriefs in Applied Sciences and Technology ((BRIEFSNANOSCIENCE))

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Abstract

The roadmap for AlGaN based DUV LEDs is similar to that for InGaN based visible LEDs, such that the success of achieving high crystalline-quality epilayers is the precondition for fabricating high-brightness DUV LEDs. This chapter will review the most adopted technologies for growing high-quality Al-rich AlGaN films, which is regarded as the milestone for making high-efficiency DUV LEDs.

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Authors and Affiliations

  1. School of Electronics and Information Engineering, Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Hebei University of Technology, Tianjin, Hebei, China

    Zi-Hui Zhang, Chunshuang Chu, Kangkai Tian & Yonghui Zhang

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  1. Zi-Hui Zhang
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  2. Chunshuang Chu
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  3. Kangkai Tian
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  4. Yonghui Zhang
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Correspondence to Zi-Hui Zhang .

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Zhang, ZH., Chu, C., Tian, K., Zhang, Y. (2019). Increase the IQE by Improving the Crystalline Quality for DUV LEDs. In: Deep Ultraviolet LEDs. SpringerBriefs in Applied Sciences and Technology(). Springer, Singapore. https://doi.org/10.1007/978-981-13-6179-1_2

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  • DOI: https://doi.org/10.1007/978-981-13-6179-1_2

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-6178-4

  • Online ISBN: 978-981-13-6179-1

  • eBook Packages: EngineeringEngineering (R0)

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