Abstract
In a multi-junction solar cell, due to the existence of multiple junctions, generation of photo-generated minority charge carrier increases that improves the efficiency of the device with reference to reduction in recombination current. In this paper, authors have analyzed the performance improvement in a multi-junction solar cell with simulation results in R-soft. Simulation results show maximum efficiency 27.59% for multi-junction solar cell whereas for single junction solar cell it is 11.0259%. In the multi-junction solar cell, open circuit voltage \( V_{oc} \) and short circuit current \( I_{sc} \) are also compared to a single junction solar cell.
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References
Nayak PP, Dutta JP, Mishra GP (2015) Efficient InGaP/GaAs DJ solar cell with double back surface field layer. Eng Sci Technol Int J
DeMoulin PD, Lundstrom MS, Schwartz RJ (1987) Back-surface field design for n/p GaAs cells solar cells. Sci Technol Appl Econ 20:229
Green MA, Emery K, Hishikawa Y, Warta W, Dunlop ED (2012) Solar cell efficiency tables. Prog Photovolt Res Appl 20(12)
Standard solar spectra, ASTM G-173-03 (International standard ISO 9845-1, 1992) https://www.pveducation.org/pvcdrom/appendices/standard-solar-spectra
Chang ST, Liao MH, Lin WK (2011) Si/SiGe hetero-junction solar cell with optimization design and theoretical analysis. Thin Solid Films 519:5022
DeMoulin PD, Lundstrom MS, Schwartz RJ (1987) Back-surface field design for n/p GaAs cells solar cells. Sci Technol Appl Econ 20:229
Liao MH, Chen CH (2010) The investigation of optimal Si-SiGe heterostructure thin-film solar cell with theoretical calculation and quantitative analysis
Kurtz SR, Faine P, Olson JM (1990) Modeling of two junction, series connected tandem solar cells using top cell thickness as an adjustable parameter. J Appl Phys 68:1890
Biron R, Pahud C, Haug FJ, Escarre J, Soderstrom K, Ballif C (2011) Window layer with p doped silicon oxide for high Voc thin-film silicon n-i-p solar cells. J Appl Phys 110:124511
Liao MH, Chen TC, Chen MJ, Liu CW (2005) Electroluminescence from metal/oxide/strained-Si tunneling diodes. Appl Phys Lett 86:223502
Trupke T, Green MA, Wuerfel P (2002) Improving solar cells by the upconversion of sub-band-gap light. J Appl Phys 92:4117
Brown MR, Goldhammer LJ, Goodelle, GS, Lortz CU, Perron JN, Powe JS, Schwartz JA, Cavicchi BT, Gillanders MS, Krut DD (1997) Proceedings of the 26th IEEE photovoltaic specialists conference. IEEE, New York, pp 805
Singh KJ, Sarkar SK (2012) Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modelling using optimized InAlGaP BSF layers. Opt Quant Electron 43(1)
Baur C, Bett W (2005) Modeling of III–V multi-junction cells based on spectrometric characterisation. In: 20th European photovoltaic solar energy conference, Barcelona, 6–10 June 2005
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Pandey, P., Bhatnagar, A., Janyani, V. (2020). Multi-junction Solar Cell Based on Efficient III–V InGaP/GaAs with GaInAsP as BSF Layers. In: Janyani, V., Singh, G., Tiwari, M., d’Alessandro, A. (eds) Optical and Wireless Technologies . Lecture Notes in Electrical Engineering, vol 546. Springer, Singapore. https://doi.org/10.1007/978-981-13-6159-3_55
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DOI: https://doi.org/10.1007/978-981-13-6159-3_55
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