Robust SRAM Cell Development for Single-Event Multiple Effects

  • Naga Raghuram CHEmail author
  • D. Manohar Reddy
  • Puli Kishore Kumar
  • Gaurav Kaushal
Conference paper
Part of the Communications in Computer and Information Science book series (CCIS, volume 892)


As the transistor size scales down exponentially to Nanometric dimensions, the susceptibility of electronic circuits to radiation increases drastically. Static-Random-Access Memories (SRAMs) are applicable in the areas of aerospace and space applications where their performance must meet the increased data rates and must be resilient to radiation exposures to guarantee reliability. Therefore, development of resilient SRAM is a challenging and demanding problem. In this paper a robust 10T SRAM (RHD10T) is proposed and compared with the existing radiation hardened (rad-hard) SRAM circuits. The proposed RHD10T SRAM is more robust towards Single Event Multiple Effects (SEME’s) compared with the recently published literature. Further, it takes 29% lesser area with respect to the standard DICE cell. In contrast to latest rad-hard SRAM cells, the proposed RHD10T cell is delivering 99.8% less failure probability for the applied charge distribution. Process variations (PV) show least effects when compared to 6T SRAM cell.

Index Terms

Single event upset Radiation hardening Single-Event Multiple Effect (SEME) Robust SRAM cell 


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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  • Naga Raghuram CH
    • 1
    Email author
  • D. Manohar Reddy
    • 1
  • Puli Kishore Kumar
    • 1
  • Gaurav Kaushal
    • 2
  1. 1.Department of Electronics and Communication EngineeringNational Institute of TechnologyPatnaIndia
  2. 2.Department of Electronics and Communication EngineeringABV-IIITMGwaliorIndia

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