Effective Method for Temperature Compensation in Dual Band Metal MEMS Resonator
Metal MEMS resonator fabricated using CMOS compatible process suffers from poor temperature compensation and low quality factor. The design, simulation and fabrication of complicated composite structures using SiO2 & metals, to achieve low temperature coefficient of frequency may be difficult, expensive and time consuming. A real time temperature compensation technique using stress induced frequency compensation through mixed mechanical and electrical coupling scheme in dual band metal MEMS resonator for future dual frequency filters and oscillators is proposed. Mechanical coupler forces all the clamped-clamped beams to vibrate at uniform resonant frequencies. Whereas placement of mechanical couplers at low and high velocity points ensures minimum variations in mode shapes irrespective of the variations in temperature of clamped-clamped beams. Electrical coupling lessen the parasitic capacitance that appears across the input-output ports therefore provides better out of band rejection. The technique achieved a temperature coefficient of frequency of −4.4 ppm/°C at ambient temperature.
KeywordsMEMS resonator Dual band Temperature compensation Temperature coefficient of frequency
A part of the reported work (fabrication) was carried out at the IITBNF, IITB under INUP which is sponsored by DeitY, MCIT, Government of India.
- 2.Wang, Y., Feng, C., Lamers, T., Feld, D., Bradley, P., Ruby, R.: FBAR resonator figure of merit improvements. In: Proceedings IEEE Ultrasonic Symposium, pp. 861–863 (2010)Google Scholar
- 5.Patel, M., Bhattacharjee, K., Reed, J., Zhgoon, S.: Temperature compensation of longitudinal leaky SAW with silicon dioxide overlay. In: Proceedings IEEE Ultrasonic Symposium, pp. 1006–1010 (2008)Google Scholar
- 7.Hsu, W.-T., Nguyen, C.C.: Stiffness-compensated temperature insensitive micromechanical resonators. In: 15th IEEE International Conference on Micro Electro Mechanical Systems, pp. 731–734 (2002)Google Scholar
- 9.Ng, E., et al.: Localized, degenerately doped epitaxial silicon for temperature compensation of resonant MEMS systems. In: 17th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers Eurosensors XXVII), pp. 2419–2422 (2013)Google Scholar
- 10.Hopcroft, M., et al.: Active temperature compensation for micromachined resonators. In: Technical Digest Solid-State Sensor, Actuator and Microsystems Workshop, pp. 364–367 (2004)Google Scholar