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Analytical Modeling of Surface Potential for Double-Gate MOSFET

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Book cover Advances in Communication, Devices and Networking

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 537))

Abstract

In this paper, an analytical surface potential of a double-gate MOSFET is modeled using the two-dimensional Poisson equation, and the impact of gate voltage (VGS) and drain voltage (VDS) on the surface potential is studied. The physical dimensions of the bulk MOSFETs have been aggressively scaled down to its limit and are not showing any improvement in device performance on further scaling. So in order to enhance the performance of the device, we need a new architecture. This new architecture is called double-gate MOSFET or DG MOSFET and it is a promising candidate for 40 nm technology nodes. DG MOSFET provides better control of the channel inversion by applying two gates across the channel.

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Author information

Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, Rangpo, 737136, Sikkim, India

    Jitendra Prasad, Amit Agarwal & P. C. Pradhan

  2. Centre for Material Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, Rangpo, 737136, Sikkim, India

    B. P. Swain

Authors
  1. Jitendra Prasad
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  2. Amit Agarwal
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  3. P. C. Pradhan
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  4. B. P. Swain
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Corresponding author

Correspondence to Amit Agarwal .

Editor information

Editors and Affiliations

  1. Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Rangpo, Sikkim, India

    Rabindranath Bera

  2. Department of Electrical and Telecommunication Engineering, Jadavpur University, Kolkata, West Bengal, India

    Subir Kumar Sarkar

  3. Department of Electronic and Communication Engineering, Sikkim Manipal University, Gangtok, Sikkim, India

    Om Prakash Singh

  4. Department of Electronic and Communication Engineering, Sikkim Manipal University, Gangtok, Sikkim, India

    Hemanta Saikia

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Prasad, J., Agarwal, A., Pradhan, P.C., Swain, B.P. (2019). Analytical Modeling of Surface Potential for Double-Gate MOSFET. In: Bera, R., Sarkar, S., Singh, O., Saikia, H. (eds) Advances in Communication, Devices and Networking. Lecture Notes in Electrical Engineering, vol 537. Springer, Singapore. https://doi.org/10.1007/978-981-13-3450-4_7

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  • DOI: https://doi.org/10.1007/978-981-13-3450-4_7

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-3449-8

  • Online ISBN: 978-981-13-3450-4

  • eBook Packages: EngineeringEngineering (R0)

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