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An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor

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Advances in Communication, Devices and Networking

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 537))

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Abstract

Here, we present an analytical solution for surface potential of a heavily doped ultralow channel Double-Gate Asymmetric Junctionless Transistor (DG AJLT). The gate-oxide-thickness and flatband voltage asymmetry were taken into considerations; further, while solving 2D Poisson’s equation both fixed and mobile charges in the silicon region regions were considered. To solve the 2D Poisson equation for the asymmetric DG junctionless transistor, we separate the solution of the channel potential into basic and perturbed terms. The equations derived from a general symmetric DG junctionless transistor are considered as basic terms, and using Fourier series a solution related to the perturbed terms for the asymmetric structures was obtained. The electrical characteristics predicted by the analytical model shows an excellent agreement with that of commercially available 3D numerical device simulators.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, North-Eastern Hill University, Shillong, 793022, Meghalaya, India

    Nipanka Bora & Rupaban Subadar

Authors
  1. Nipanka Bora
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  2. Rupaban Subadar
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Corresponding author

Correspondence to Nipanka Bora .

Editor information

Editors and Affiliations

  1. Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Rangpo, Sikkim, India

    Rabindranath Bera

  2. Department of Electrical and Telecommunication Engineering, Jadavpur University, Kolkata, West Bengal, India

    Subir Kumar Sarkar

  3. Department of Electronic and Communication Engineering, Sikkim Manipal University, Gangtok, Sikkim, India

    Om Prakash Singh

  4. Department of Electronic and Communication Engineering, Sikkim Manipal University, Gangtok, Sikkim, India

    Hemanta Saikia

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© 2019 Springer Nature Singapore Pte Ltd.

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Bora, N., Subadar, R. (2019). An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor. In: Bera, R., Sarkar, S., Singh, O., Saikia, H. (eds) Advances in Communication, Devices and Networking. Lecture Notes in Electrical Engineering, vol 537. Springer, Singapore. https://doi.org/10.1007/978-981-13-3450-4_6

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  • DOI: https://doi.org/10.1007/978-981-13-3450-4_6

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-3449-8

  • Online ISBN: 978-981-13-3450-4

  • eBook Packages: EngineeringEngineering (R0)

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