Abstract
The ZnO/Si heterojunction solar cell has attracted a great deal of interest among researchers in recent days due to its lower process steps, and hence lower cost than Si solar cell. However, the experimentally fabricated ZnO/Si solar cell shows efficiency for below the theoretically predicted values (Hussain et al Sol Energy Mater Sol Cell 139:95–100, 2015 [1], Chabane et al Thin Solid Films 636:419–424, 2017 [2]). Researchers predicted that the difference may be due to the interface defects between ZnO and Si. Mainly, the open-circuit voltage (Voc) is below the theoretical value. But there is no such detail on interface effect which has been studied in detail. A 1D solar cell simulator SCAPS is used for this purpose. Result shows that the efficiency 15.42% with open-circuit voltage of 541 mV for a very low interface defect density, in the order of 1010 cm−2. With increasing interface defect density, efficiency decreases significantly, the Voc is as low as 211 mV for interface defect density of 5 × 1014 cm−2.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Hussain, B., Ebong, A., Ferguson, I.: Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell. Sol. Energy Mater. Sol. Cells 139, 95–100 (2015)
Chabane, L., Zebbar, N., Trari, M., Kechouane, M.: Opto-capacitive study of n-ZnO/p-Si heterojunctions elaborated byreactive sputtering method: Solar cell applications. Thin Solid Films 636, 419–424 (2017)
Purica, M., Budianu, E., Rusu, E.: Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications. Microelectron. Reliab. 51–52, 425–431 (2000)
Mandalapu, L.J., Xiu, F.X., Yang, Z., Zhao, D.T., Liua, J.L.: p_type behavior from Sb-doped ZnO heterojunction photodiodes. Appl. Phys. Lett. 88, 112108-1–112108-3 (2006)
He, J.H., Ho, C.H.: The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy. Appl. Phys. Lett. 91, 233105-1–233105-3 (2007)
Afify, H.H., El-Hefnawi, S.H., Eliwa, A., Elnaby, M.M.A., Ahmed, N.M.: Realization and characterization of ZnO/n-Si Solar cells by spray pyrolysis. Egypt. J. Solids 28(2), 243–254 (2005)
Yen, T., Li, M., Chokshi, N., DeLeon, R.L., Kim, J., Tompa, G., Anderson, W.A.: Current transport in ZnO/Si heterojunctions for low-cost solar cells. In: 4th Photovo/Taic Energy Conversion Conference, pp. 1653–1656 (2006)
Baik, D.G., Cho, S.M.: Application of sol-gel derived films for ZnOln-Si junction solar cells. Thin Solid Films 354, 227–231 (1999)
Wei-Ying, Z., Sheng, Z., Li-Jie, S., Zhu-Xi, F.: Dependence of photovoltaic property of ZnO/Si heterojunction solar cell on thickness of ZnO films. Chin. Phys. Lett. 25(5), 1829–1831 (2008)
Hussain, B.: Improvement in open circuit voltage of n-ZnO/p-Si solar cell by using amorphous-ZnO at the interface. Prog Photovolt Res Appl. 25(11), 919–927 (2017)
Auret, F.D., Goodman, S.A., Legodi, M.J., Meyer, W.E.: Electrical characterization of vapor phase-grown single crystal ZnO. Appl. Phys. Letts. 80(8), 1340–1342 (2002)
Lee, J.Y., Choi, Y.S., Choi, W.H., Yeom, H.W., Yoon, Y.K., Kim, J.H., Im, S.: Characterization of films and interfaces in n-ZnO/p-Si photodiodes. Thin Solid Films 420, 112–116 (2002)
Bingce, L., Cihui, L., Bo, Y.: Grain boundary layer behavior in ZnO/Si heterostructure. J. Semicond. 31(3), 032003 (2010)
Bingce, L., Cihui, L., Bo, Y.: Effect of grain boundary barrier in ZnO/Si heterostructure. Chin. Phys. Lett. 26(11), 117101 (2009)
Cihui, L., Bingce, L., Xi, F.Z.: Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition. Chin. Phys. B 17(6), 172292 (2008)
Lee, C., Shin, M., Lim, M., Seo, J.Y., Lee, J.E., Lee, H.Y., Kim, B.J., Choi, D.: Material properties of microcrystalline silicon for solar cell application. Sol. Energy Mater. Sol. Cells 95(1), 207–210 (2011)
Acknowledgements
This work is supported by MHRD, Govt. of India through the project, Establishment of Centre of Excellence in Renewable Energy, Project under FAST (Sanc. No. F. No. 5-6/2013-TS-VlI dated 4th August, 2014) at Indian Institute of Technology (Indian School of Mines), Dhanbad.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Mandal, L., Sadique Anwer Askari, S., Kumar, M., Imam, M. (2019). Analysis of ZnO/Si Heterojunction Solar Cell with Interface Defect. In: Biswas, U., Banerjee, A., Pal, S., Biswas, A., Sarkar, D., Haldar, S. (eds) Advances in Computer, Communication and Control. Lecture Notes in Networks and Systems, vol 41. Springer, Singapore. https://doi.org/10.1007/978-981-13-3122-0_53
Download citation
DOI: https://doi.org/10.1007/978-981-13-3122-0_53
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-3121-3
Online ISBN: 978-981-13-3122-0
eBook Packages: EngineeringEngineering (R0)