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Comparison of Different SRAM Cell Topologies Using 180 nm Technology

  • D. ChaudhuriEmail author
  • Kousik Roy
  • A. Nag
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 41)

Abstract

With an overview and the limitations of the conventional SRAM cell, different SRAM cell topologies (4T–11T) are discussed. The cells are designed using Tanner EDA tool with 180 nm technology. The variation of power and read delay of different cell topologies compared to conventional SRAM cell are considered. The behaviour of power against supply voltage Vdd for different cell topologies reveals that the higher cell topologies offer better stability by maintaining the power as low as possible.

Keywords

SRAM cell Low power Read stability 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  1. 1.Department of Electronics & Communication EngineeringModern Institute of Engineering & TechnologyHooghlyIndia
  2. 2.Department of Electronics & Communication EngineeringAsansol Engineering CollegeAsansolIndia
  3. 3.Department of PhysicsModern Institute of Engineering & TechnologyHooghlyIndia

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