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Trap-Assisted Transport in Silicon Nanorods

  • Ujjwal GhantaEmail author
  • Syed Minhaz Hossain
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 41)

Abstract

In this work, we have studied the charge transport and photoluminescence (PL) properties of silicon nanorods (SiNRs) on substrate synthesized by the electrochemical etching of p-type Si wafer. The DC current–voltage (I-V) characteristics of SiNR within temperature 100–350 K show nonlinear and asymmetric behavior. From the temperature-dependent DC conductivity measurement, activation energy of 0.78 eV has been found. The room temperature emission spectrum is characterized by the appearance of single PL band in the visible region which can be de-convoluted into two Gaussian bands. The observed phenomena are interpreted in terms of defect states in the random SiNR network.

Keywords

Silicon Nanorods Activation energy Carrier transport 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2019

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringIndian Institute of Engineering Science and TechnologyShibpur, Howrah-3India
  2. 2.Department of PhysicsIndian Institute of Engineering Science and TechnologyShibpur, Howrah-3India

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