Abstract
The behavior of gallium nitride transistor under the electric–optical phonon scattering is studied and the variation of current density with the concentration charge density is explained. Due to polarization in GaN, two-dimensional electron gas causes the electrons drift velocity to change when some voltage applied to device. The mobility of GaN MOSFET is been studied and plotted with respect to the temperature. The current density which is related to the drift velocity and carrier concentration is analyzed and plotted.
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Acknowledgements
This research work was done with the support of my colleagues in the Department of Electronics Engineering, IIT(ISM), Dhanbad India and for their support and allowing me to work in this field.
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Mazumdar, K., Kumar, P., Ghosal, A. (2019). Comparative Analysis of Current for Specific Scattering in GaN MOSFET. In: Biswas, U., Banerjee, A., Pal, S., Biswas, A., Sarkar, D., Haldar, S. (eds) Advances in Computer, Communication and Control. Lecture Notes in Networks and Systems, vol 41. Springer, Singapore. https://doi.org/10.1007/978-981-13-3122-0_13
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DOI: https://doi.org/10.1007/978-981-13-3122-0_13
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