Comparative Analysis of Current for Specific Scattering in GaN MOSFET
The behavior of gallium nitride transistor under the electric–optical phonon scattering is studied and the variation of current density with the concentration charge density is explained. Due to polarization in GaN, two-dimensional electron gas causes the electrons drift velocity to change when some voltage applied to device. The mobility of GaN MOSFET is been studied and plotted with respect to the temperature. The current density which is related to the drift velocity and carrier concentration is analyzed and plotted.
KeywordsHigh electron mobility transistors (HEMTs) Two-dimensional electron gas (2DEG) Carrier charge concentration Phonon saturation Optical phonon scattering Polarization Effective electron velocity Metal oxide semiconductor field effect transistor (MOSFET)
This research work was done with the support of my colleagues in the Department of Electronics Engineering, IIT(ISM), Dhanbad India and for their support and allowing me to work in this field.
- 1.White, B.D., Bataiev, M., Goss, S.H., Hu, X., Karmarkar, A., Fleetwood, D.M., Schrimpf, R.D., Schaff, W.J., Brillson, L.J.: Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence. IEEE Trans. Nucl. Sci. 50(6), 1934–1941 (2003)CrossRefGoogle Scholar
- 3.Eastman, L.F., Tilak, V., Smart, J., Green, B.M., Chumbes, E.M., Dimitrov, R., Kim, H., Ambacher, O.S., Weiman, N., Prunty, T., Murphy, M., Schaff, W.J., Shealy, J.R.: Undoped AlGaN/GaN HEMTs for microwave power amplification. IEEE Trans. Electron. Devices 48(3), 479–485 (2001)CrossRefGoogle Scholar
- 5.Ardaravicius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L.F., Shealy, J.R., Vertiatchikh, A.: Electron drift velocity in AlGaN/GaN channel at high electric fields. Appl. Phys. J. 83(19), 4038–4040 (2003)Google Scholar
- 10.Matulionis, A., Liberis, J., Matulioniene, I., Ramonas, M., Eastman, L.F., Shealy, J.R., Tilak, V., Vertiatchikh, A.: Hot-phonon temperature and lifetime in a biased AlxGa1−xN/GaN channel estimated from noise analysis. Phys. Rev. B Condens. Matter Mater. Phys. 68(3), 335–338 (2003)CrossRefGoogle Scholar