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Microwave Bipolar Transistors

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Microwave Active Devices and Circuits for Communication

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 533))

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Abstract

This chapter describes various types of microwave bipolar junction transistors (BJTs). Frequency limitation of BJT and structural modification for suitable operation at microwave frequency band are also discussed. The chapter also describes GaAs- and SiGe-based hetero-junction bipolar transistors (HBTs) suitable for microwave and mmwave applications. Temperature dependency of BJTs and its effects on circuit performance are also discussed.

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Authors and Affiliations

  1. Space Applications Centre, Indian Space Research Organization (ISRO), Ahmedabad, Gujarat, India

    Subhash Chandra Bera

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  1. Subhash Chandra Bera
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Correspondence to Subhash Chandra Bera .

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Bera, S.C. (2019). Microwave Bipolar Transistors. In: Microwave Active Devices and Circuits for Communication. Lecture Notes in Electrical Engineering, vol 533. Springer, Singapore. https://doi.org/10.1007/978-981-13-3004-9_5

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  • DOI: https://doi.org/10.1007/978-981-13-3004-9_5

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-3003-2

  • Online ISBN: 978-981-13-3004-9

  • eBook Packages: EngineeringEngineering (R0)

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