Abstract
This chapter presents construction, working principle and characteristic of Step Recovery Diodes (SRDs), tunnel diodes, backward diodes, and varactor diodes. The applications of these diodes in microwave communication systems are also presented.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Streetman BG (1986) Solid state electronic devices, 2nd edn. Prentice Hall of India Pvt. Ltd., New Delhi
Ko Wen-Hsiung (1961) The forward transient behaviour of semiconductor junction diodes. Solid-State Electron 3:59
Ko WH (1961) The reverse transient behaviour of semiconductor junction diodes. IRE Trans Elec Dev ED-8:123
Kuno HJ (1964) Analysis and characterization of P-N junction diode switching. IEEE Trans Elec Dev 11:8
Moll JL, Hamilton SA (1969) Physical modeling of the pulse and harmonic step recovery diode for generation circuits. Proc IEEE 57(7):1250
Karlovsky J (1967) The curvature coefficient of germanium tunnel and backward diodes. Solid-State Electron 10:1109
Ulriksson B (1979) Continuous varactor-diode phase shifter with optimized frequency response. IEEE Trans Microw Theor Tech 27(7):650–654
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2019 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Bera, S.C. (2019). Special Microwave Diodes. In: Microwave Active Devices and Circuits for Communication. Lecture Notes in Electrical Engineering, vol 533. Springer, Singapore. https://doi.org/10.1007/978-981-13-3004-9_4
Download citation
DOI: https://doi.org/10.1007/978-981-13-3004-9_4
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-3003-2
Online ISBN: 978-981-13-3004-9
eBook Packages: EngineeringEngineering (R0)