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Properties Engineering of III–V Nanowires for Electronic Application

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Nanowire Electronics

Part of the book series: Nanostructure Science and Technology ((NST))

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Abstract

III–V nanowires (NWs) are promising building blocks for future electronics and sensors due to their excellent electrical and optical properties. However, we need to know how to manipulate their electrical properties before transferring them from laboratory to daily life. Therefore, the manipulation of their electrical properties becomes important for practical applications. The aim of this chapter is to review and discuss the strategies on how to manipulate the electrical properties by means of surface manipulation, contact modification, and crystal engineering. The effect and the underlying mechanism of the strategies will be discussed. We expect these techniques to be promising and, after further development, are applicable in the next generations of electronic devices and sensors.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, China

    Sen Po Yip, Lifan Shen, Edwin Y. B. Pun & Johnny C. Ho

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  2. Lifan Shen
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  1. Institute of Semiconductors Chinese Academy of Sciences, Beijing, China

    Guozhen Shen

  2. Department of Materials Science and Engineering, National Tsing-Hua University, Taiwan, China

    Yu-Lun Chueh

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Yip, S.P., Shen, L., Pun, E.Y.B., Ho, J.C. (2019). Properties Engineering of III–V Nanowires for Electronic Application. In: Shen, G., Chueh, YL. (eds) Nanowire Electronics. Nanostructure Science and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2367-6_3

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