Abstract
This paper proposes a new design for sensing the pressure with high sensitivity on piezo-resistive MEMS sensing mechanism. This proposed structure is designed as a single-sided cantilever with two different dimensional structures which produces a useful result to measure both high and low pressure and the piezo-resistive material are only applied on the high-stress deflecting area to get more accurate value. Displacement and the maximum stress of piezoresistive will be simulated and this design is mainly designed to identify the intracranial changes in the brain with the help of piezo-resistive layer, we can get the results through the potential variation. The potential difference is the main advantage for the paper because without any conversion it is possible to directly connect with the application.
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Kalaiyazhagan, N., Shanmuganantham, T., Sindhanaiselvi, D. (2019). MEMS Sensor-Based Cantilever for Intracranial Pressure Measurement. In: Panda, G., Satapathy, S., Biswal, B., Bansal, R. (eds) Microelectronics, Electromagnetics and Telecommunications. Lecture Notes in Electrical Engineering, vol 521. Springer, Singapore. https://doi.org/10.1007/978-981-13-1906-8_14
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DOI: https://doi.org/10.1007/978-981-13-1906-8_14
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