Abstract
The exceptionally high stretchability of atomically thin materials enables extensive manipulation of their properties and exploration of rich physics through the application of external strain. Therefore, it is important to understand strain effects on two-dimensional materials both for fundamental studies and developing various applications, especially in flexible and wearable devices. In this chapter, we will give several examples of how Raman spectroscopy can be utilized to investigate the strain effects on fundamental properties of atomically thin materials.
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References
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004)
M. Dresselhaus, A. Jorio, R. Saito, Characterizing graphene, graphite, and carbon nanotubes by Raman spectroscopy. Annu. Rev. Condens. Matter Phys. 1, 89–108 (2010)
A.C. Ferrari, D.M. Basko, Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 8, 235–246 (2013)
R. Saito, M. Hofmann, G. Dresselhaus, A. Jorio, M. Dresselhaus, Raman spectroscopy of graphene and carbon nanotubes. Adv. Phys. 60, 413–550 (2011)
C. Cong, T. Yu, K. Sato, J. Shang, R. Saito, G.F. Dresselhaus, M.S. Dresselhaus, Raman characterization of ABA- and ABC-stacked trilayer graphene. ACS Nano 5, 8760–8768 (2011)
L.M. Malard, D.L. Mafra, S.K. Doorn, M.A. Pimenta, Resonance Raman scattering in graphene: probing phonons and electrons. Solid State Commun. 149, 1136–1139 (2009)
L.M. Malard, M.A. Pimenta, G. Dresselhaus, M.S. Dresselhaus, Raman spectroscopy in graphene. Phys. Rep. 473, 51–87 (2009)
J. Yan, Y. Zhang, P. Kim, A. Pinczuk, Electric field effect tuning of electron-phonon coupling in graphene. Phys. Rev. Lett. 98, 166802-1–166802-4 (2007)
K. Kang, D. Abdula, D.G. Cahill, M. Shim, Lifetimes of optical phonons in graphene and graphite by time-resolved incoherent anti-Stokes Raman scattering. Phys. Rev. B 81, 165405-1–165405-6 (2010)
A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S.K. Saha, U.V. Waghmare, K.S. Novoselov, H.R. Krishnamurthy, A.K. Geim, A.C. Ferrari, A.K. Sood, Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 3, 210–215 (2008)
L. Cançado, M. Pimenta, R. Saito, A. Jorio, L. Ladeira, A. Grueneis, A. Souza-Filho, G. Dresselhaus, M. Dresselhaus, Stokes and anti-stokes double resonance Raman scattering in two-dimensional graphite. Phys. Rev. B 66, 035415 (2002)
Y.M. You, Z.H. Ni, T. Yu, Z.X. Shen, Edge chirality determination of graphene by Raman spectroscopy. Appl. Phys. Lett. 93, 163112-1–163112-3 (2008)
C. Cong, T. Yu, H. Wang, Raman study on the G mode of graphene for determination of edge orientation. ACS Nano 4, 3175–3180 (2010)
T. Yu, Z. Ni, C. Du, Y. You, Y. Wang, Z. Shen, Raman mapping investigation of graphene on transparent flexible substrate: the strain effect. J. Phys. Chem. C 112, 12602–12605 (2008)
Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening. ACS Nano 2, 2301–2305 (2008)
C.A. Cooper, R.J. Young, Investigation of structure/property relationships in particulate composites through the use of Raman spectroscopy. J. Raman Spectrosc. 30, 929–938 (1999)
T. Mohiuddin, A. Lombardo, R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D. Basko, C. Galiotis, N. Marzari, Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation. Phys. Rev. B 79, 205433-1–205433-8 (2009)
M. Huang, H. Yan, C. Chen, D. Song, T.F. Heinz, J. Hone, Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy. Proc. Natl. Acad. Sci. U. S. A 106, 7304–7308 (2009)
B. Kelly, Physics of graphite (Applied Science, London, 1981), p. 477
D. Yoon, Y.-W. Son, H. Cheong, Strain-dependent splitting of the double-resonance Raman scattering band in graphene. Phys. Rev. Lett. 106, 155502-1–155502-4 (2011)
K. Mak, C. Lee, J. Hone, J. Shan, T. Heinz, Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805-1–136805-4 (2010)
A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang, Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271–1275 (2010)
W. Zhao, Z. Ghorannevis, L. Chu, M. Toh, C. Kloc, P.-H. Tan, G. Eda, Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 7, 791–797 (2012)
B. Radisavljevic, M.B. Whitwick, A. Kis, Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011)
B. Radisavljevic, J. Brivio, V. Giacometti, A. Kis, A. Radenovic, Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011)
R.C. Cooper, C. Lee, C.A. Marianetti, X. Wei, J. Hone, J.W. Kysar, Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 87, 035423-1–035423-11 (2013)
S. Bertolazzi, J. Brivio, A. Kis, Stretching and breaking of ultrathin MoS2. ACS Nano 5, 9703–9709 (2011)
Y. Wang, C. Cong, C. Qiu, T. Yu, Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 9, 2857–2861 (2013)
Y. Wang, C. Cong, W. Yang, J. Shang, N. Peimyoo, Y. Chen, J. Kang, J. Wang, W. Huang, T. Yu, Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2. Nano Res. 8, 2562–2572 (2015)
H.J. Conley, B. Wang, J.I. Ziegler, R.F. Haglund Jr., S.T. Pantelides, K.I. Bolotin, Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626–3630 (2013)
H.-X. Zhong, S. Gao, J.-J. Shi, L. Yang, Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS2 and ReSe2. Phys. Rev. B 92, 115438-1–115438-7 (2015)
H. Zhao, J. Wu, H. Zhong, Q. Guo, X. Wang, F. Xia, L. Yang, P. Tan, H. Wang, Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res. 8, 3651–3661 (2015)
S. Yang, C. Wang, H. Sahin, H. Chen, Y. Li, S.S. Li, A. Suslu, F.M. Peeters, Q. Liu, J. Li, S. Tongay, Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering. Nano Lett. 15, 1660–1666 (2015)
A. Castellanos-Gomez, L. Vicarelli, E. Prada, J.O. Island, K.L. Narasimha-Acharya, S.I. Blanter, D.J. Groenendijk, M. Buscema, G.A. Steele, J.V. Alvarez, H.W. Zandbergen, J.J. Palacios, H.S.J. van der Zant, Isolation and characterization of few-layer black phosphorus. 2D Mater 1, 025001 (2014)
X. Ling, H. Wang, S. Huang, F. Xia, M.S. Dresselhaus, The renaissance of black phosphorus. Proc. Natl. Acad. Sci. 112, 4523–4530 (2015)
G. Qin, Q.-B. Yan, Z. Qin, S.-Y. Yue, M. Hu, G. Su, Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles. Phys. Chem. Chem. Phys. 17, 4854–4858 (2015)
J. Qiao, X. Kong, Z.-X. Hu, F. Yang, W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014)
J. Wu, N. Mao, L. Xie, H. Xu, J. Zhang, Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem. Int. Ed. 54, 2366–2369 (2015)
F. Xia, H. Wang, Y. Jia, Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014)
A. Jain, A.J. McGaughey, Strongly anisotropic in-plane thermal transport in single-layer black phosphorene. Sci. Rep. 5, 8501 (2015)
H.B. Ribeiro, M.A. Pimenta, C.J.S. de Matos, R.L. Moreira, A.S. Rodin, J.D. Zapata, E.A.T. de Souza, A.H. Castro Neto, Unusual angular dependence of the Raman response in black phosphorus. ACS Nano 9, 4270–4276 (2015)
Y. Wang, C. Cong, R. Fei, W. Yang, Y. Chen, B. Cao, L. Yang, T. Yu, Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus. Nano Res. 8, 3944–3953 (2015)
I. Stenger, L. Schué, M. Boukhicha, B. Berini, B. Plaçais, A. Loiseau, J. Barjon, Low frequency Raman spectroscopy of few-atomic-layer thick hBN crystals. 2D Mater 4, 031003 (2017)
A. Falin, Q. Cai, E.J.G. Santos, D. Scullion, D. Qian, R. Zhang, Z. Yang, S. Huang, K. Watanabe, T. Taniguchi, M.R. Barnett, Y. Chen, R.S. Ruoff, L.H. Li, Mechanical properties of atomically thin boron nitride and the role of interlayer interactions. Nat. Commun. 8, 15815 (2017)
R.V. Gorbachev, I. Riaz, R.R. Nair, R. Jalil, L. Britnell, B.D. Belle, E.W. Hill, K.S. Novoselov, K. Watanabe, T. Taniguchi, A.K. Geim, P. Blake, Hunting for monolayer boron nitride: optical and Raman signatures. Small 7, 465–468 (2011)
R. Arenal, A.C. Ferrari, S. Reich, L. Wirtz, J.Y. Mevellec, S. Lefrant, A. Rubio, A. Loiseau, Raman spectroscopy of single-wall boron nitride nanotubes. Nano Lett. 6, 1812–1816 (2006)
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Cong, C., Wang, Y., Yu, T. (2019). Raman Spectroscopy Study of Two-Dimensional Materials Under Strain. In: Tan, PH. (eds) Raman Spectroscopy of Two-Dimensional Materials. Springer Series in Materials Science, vol 276. Springer, Singapore. https://doi.org/10.1007/978-981-13-1828-3_6
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