Abstract
Surface potential of lightly doped symmetric double-gate MOSFET is analytically evaluated using Ortiz-Conde model for different structural dimensions in nanometric range, and corresponding drain current is evaluated for lower region of applied bias. The device dimension is considered in nanometer range, and due to light doping, the result of potential distribution exhibits increasing nature with gate voltage, where potential drop across dielectric layer is taken into account for realistic calculation. Pinch-off voltage dependence on material and structural parameters is estimated from static characteristics, and corresponding drain resistance is calculated. Simulated findings are very close to the previously obtained results. Result will help to design DG for low power application.
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References
Taur, Y., Liang, X., Wang, W., Lu, H.: A continuous, analytic drain-current model for DG MOSFETs. IEEE Electron Device Lett. 25(2), 107–109 (2004)
Subrahmanyam, B., Kumar, M.J.: Recessed source concept in nanoscale vertical surrounding gate (VSG) MOSFETs for controlling short-channel effects. Phys. E 41(4), 671–676 (2009)
Jimenez, D., Iniguez, B., Sune, J., Marsal, L.F., Pallares, J., Roig, J., Flores, D.: Continuous analytic I–V model for surrounding-gate MOSFETs. IEEE Electron Device Lett. 25(8), 571–573 (2004)
Li, Y., Chou, H.M.: A comparative study of electrical characteristic on sub-10-nm double-gate MOSFETs. IEEE Trans. Nanotechnol. 4, 645–647 (2005)
Li, Y., Yu, S.M.: A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion condition. Nanotechnology 15, 1009–1016 (2004)
Pao, H.C., Sah, C.T.: Effect of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors. Solid State Electron. 9(10), 927–937 (1966)
Chang, S., Wang, G., Huang, Q., Wang, H.: Analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry. IEEE Trans. Electron Devices 56(10), 2297–2301 (2009)
Yu, B., Lu, H., Liu, M., Taur, Y.: Explicit continuous models for double-gate and surrounding-gate MOSFETs. IEEE Trans. Electron Devices 54(10), 2175–2722 (2007)
Ortiz-Conde, A., Garcia-Sanchez, F.J.: A rigorous classical solution for the drain current of doped double-gate MOSFETs. IEEE Trans. Electron Devices 59(9), 2390–2395 (2012)
Lo, S.C., Li, Y., Yu, S.M.: Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors. Math. Comput. Model. 46, 180–188 (2007)
Abebe, H., Cumberbatch, E., Morris, H., Tyree, V., Numata, T., Uno, S.: Symmetric and asymmetric double gate MOSFET modeling. J. Semicond. Technol. Sci. 9(4), 225–232 (2009)
Cobianu, O., Glesner, M.: A computationally efficient method for analytical calculation of potentials in undoped symmetric DG SOI MOSFET. Techn. Proc. NSTI Nanotechnol. Conf. Trade Show Compact Model. 3(7), 804–807 (2006)
Ortiz-Conde, A., Garcia-Sanchez, F.J., Muci, J., Malobabic, S., Liou, J.J.: A review of core compact models for undoped double-gates SOI MOSFETs. IEEE Trans. Electron Devices 54(1), 131–140 (2007)
Nandi, A., Saxena, A.K., Dasgupta, S.: Analytical modeling of a double gate MOSFET considering source/drain lateral Gaussian doping profile. IEEE Trans. Electron Devices 60(11), 3705–3709 (2013)
Sayed, S., Khan, M.Z.R.: Analytical modeling of surface accumulation behavior of fully depleted SOI 4 GATE transistors (G(4)-FETs). Solid State Electron. 81, 105–112 (2013)
Jurczak, M., Jakubowski, A., Lukasiak, L.: The effects of high doping on the I–V characteristics of a thin-film SOI MOSFET. IEEE Trans. Electron Devices 45(9), 1985–1992 (1998)
Jandhyala, S., Mahapatra, S.: An efficient robust algorithm for the surface-potential calculation of independent DG MOSFET. IEEE Trans. Electron Devices 58(6), 1663–1671 (2011)
Zhou, X., Zhu, Z., Rustagi, S.C., See, G.H., Zhu, G., Lin, S., Wei, C., Lim, G.H.: Rigorous surface-potential solution for undoped symmetric double-gate MOSFETs considering both electron and holes at quasi nonequilibrium. IEEE Trans. Electron Devices 55(2), 616–623 (2008)
He, J., Bian, W., Tao, Y., Liu, F., Lu, K., Wu, W., Wang, T., Chan, M.: An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration. Solid State Electron. 51(1), 179–185 (2007)
Ortiz-Conde, A., Garcia-Sanchez, F.J., Muci, J.: Rigorous analytical solution for drain current of undoped symmetric dual-gate MOSFETs. Solid State Electron. 49(4), 640–647 (2005)
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Roy, K., Chowdhury, A.R., Deyasi, A., Sarkar, A. (2019). Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model. In: Mandal, J., Sinha, D., Bandopadhyay, J. (eds) Contemporary Advances in Innovative and Applicable Information Technology. Advances in Intelligent Systems and Computing, vol 812. Springer, Singapore. https://doi.org/10.1007/978-981-13-1540-4_5
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DOI: https://doi.org/10.1007/978-981-13-1540-4_5
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