Abstract
In this work, we are interested in modeling and simulation of InAs/GaAs quantum dots solar cell, two parameters were investigated the number of quantum dots embedded in the solar cell and the thermal effect on their parameter characteristics. First we have studied the effect of number of quantum dot layers inserted; the insertion of 40 quantum dot layers gives better results. To validate our results we have made a comparison with experimental works, and then we have studied the effect of temperature on the parameter characteristics of InAs/GaAs solar cell with 40 quantum dot layers. Like all other semiconductor devices solar cells are sensitive to temperature the most parameter affected by the temperature rising is the open circuit voltage. The increase of temperature from 250 K to 400 K leads to the decrease of Voc from 1.3 to 0.72 V and, in turn, the conversion efficiency from 24.78% to 16.18%, however the Jsc increases slightly from 24.44 Am/cm2 for 250 K to 34.57 Am/cm2 for 400 K.
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Aissat, A., Harchouch, N., Vilcot, J.P. (2019). Optimization of the Temperature Effects on Structure InAs/GaAs QDSC. In: Hajji, B., Tina, G.M., Ghoumid, K., Rabhi, A., Mellit, A. (eds) Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy. ICEERE 2018. Lecture Notes in Electrical Engineering, vol 519. Springer, Singapore. https://doi.org/10.1007/978-981-13-1405-6_30
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DOI: https://doi.org/10.1007/978-981-13-1405-6_30
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