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(GaSb)0.5–Ge1.6Te Alloys for High-Temperature Phase Change Memory Applications

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Advanced Functional Materials (CMC 2017)

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Abstract

In this paper, phase change characteristics of (GaSb)0.5–Ge1.6Te alloy were investigated for long data retention phase change memory application. (GaSb)0.5–Ge1.6Te film has high crystallization temperature (357 °C) and large crystallization activation energy (4.57 eV), resulting in a good data retention ability (251 °C for 10 years). The prominent advantages can be seen in comparison with those of pure GeTe and Ge2Sb2Te5. The fine crystal grain size is smaller than GeTe owing to GaSb doping, which is contributed to operation speed. Furthermore, as short as 20 ns electrical pulse can achieve Reset operation. The pulse width of 200 ns requires only a Reset voltage of 1.5 V, which is much lower than that of GeTe-based cells.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (2017YFA0206101, 2017YFB0701703), “Strategic Priority Research Program” of the Chinese Academy of Sciences (XDA09020402), National Integrate Circuit Research Program of China (2009ZX02023-003), National Natural Science Foundation of China (61376006, 61401444, 61504157, 61622408), Science and Technology Council of Shanghai (17DZ2291300).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Yuan Xue, Sannian Song, Shuai Yan, Tianqi Guo, Lanlan Shen, Liangcai Wu, Zhitang Song & Songlin Feng

  2. University of the Chinese Academy of Sciences, Beijing, 100049, China

    Yuan Xue, Shuai Yan, Tianqi Guo & Lanlan Shen

Authors
  1. Yuan Xue
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  2. Sannian Song
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  3. Shuai Yan
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  4. Tianqi Guo
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  5. Lanlan Shen
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  6. Liangcai Wu
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  7. Zhitang Song
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  8. Songlin Feng
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Corresponding authors

Correspondence to Yuan Xue or Sannian Song .

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Editors and Affiliations

  1. Chinese Materials Research Society, Beijing, China

    Yafang Han

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Xue, Y. et al. (2018). (GaSb)0.5–Ge1.6Te Alloys for High-Temperature Phase Change Memory Applications. In: Han, Y. (eds) Advanced Functional Materials. CMC 2017. Springer, Singapore. https://doi.org/10.1007/978-981-13-0110-0_42

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