Effect of Nd-Doping on the Microstructure and Magnetic Properties of NdX(Fe47.5Pd52.5)100-X Films

  • Jianjun Huo
  • Gang Cheng
  • Yusong Du
  • Kuang Pan
  • Lin Li
Conference paper


In order to investigate the effect of rare earth Nd doping on FePd alloy thin films, the samples of Ndx(Fe47.5Pd52.5)100-x (x = 0, 2, 2.7, 3.4, 4) films were prepared by a DC magnetic sputtering method. The microstructure and magnetic properties were characterized by XRD, EDS, PPMS et al. The XRD data indicated that the addition of rare earth element Nd could significantly shorten the annealing time and the annealing temperature from the disordered FCC phase to the ordered FCT phase and increase the driving force of the phase transition. In addition, the appropriate addition of Nd element also has the role of grain refinement. The grain size could reach 29–14 nm and the appropriate grain size was conducive to the exchange coupling between the grains. The hysteresis loop of the films showed that the coercivity (Hc) and remanence ratio (Mr/Ms) first increased with the increase of Nd content sharply and then decreased. When the content of rare earth x = 2.7, the maximum coercivity was 3.05 kOe. The changes of coercivity and remanence ratio with the increase of annealing temperature also first increased and then decreased, and reached the maximum at 550 °C.


FePd films Nd doping Heat treatment Magnetization 



This study was supported by the National Basic Research Program of China (Grant No. 2014CB643703), the National Key Research and Development Program of China (2016YFB0700901), and the National Nature Science Foundation of China (Grant No. 51261004). The authors also acknowledge Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, China (Grant No: 131003-Z).


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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Jianjun Huo
    • 1
  • Gang Cheng
    • 1
    • 2
  • Yusong Du
    • 1
    • 2
  • Kuang Pan
    • 1
  • Lin Li
    • 1
    • 2
  1. 1.School of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilinChina
  2. 2.Guangxi Key Laboratory of Information MaterialsGuilin University of Electronic TechnologyGuilinChina

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