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International Conference on Communication, Devices and Computing

ICCDC 2017: Communication, Devices, and Computing pp 241–251Cite as

Performance Improvement of Light-Emitting Diodes with W-Shaped InGaN/GaN Multiple Quantum Wells

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 470))

Abstract

Using APSYS simulation program, we investigate the optical performance of InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LEDs) with a W-shaped well structure with respect to optical output power and internal quantum efficiency with variation in injection current. The concept of W-shaped quantum well is proposed to lower the polarization field and to obtain better overlapping between the peaks of electron and hole concentrations. Our proposed LED with W-shaped quantum wells exhibits 91% improvement in output power as compared to a rectangular quantum well LED. Furthermore, our proposed LED shows 20% efficiency drooping in contrast to 49% with a conventional LED at an input current = 120 mA. Moreover, we analyze our results with the help of band diagram, electron and hole concentrations, and also radiative recombination rate in the wells obtained from numerical simulation program.

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Acknowledgements

The first author is thankful to UGC for supporting his fellowship vide no. F1-17.1/2013-14/RGNF-2013-14-SC-WES-52737/ (as may be seen in SA-III/Website).

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, 700009, India

    Himanshu Karan & Abhijit Biswas

Authors
  1. Himanshu Karan
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  2. Abhijit Biswas
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Corresponding author

Correspondence to Himanshu Karan .

Editor information

Editors and Affiliations

  1. Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, West Bengal, India

    Jaydeb Bhaumik

  2. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology Kharagpur, Kharagpur, India

    Indrajit Chakrabarti

  3. Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, West Bengal, India

    Bishnu Prasad De

  4. Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, West Bengal, India

    Banibrata Bag

  5. Department of Electronics and Communication Engineering, Haldia Institute of Technology, Haldia, West Bengal, India

    Surajit Mukherjee

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Karan, H., Biswas, A. (2017). Performance Improvement of Light-Emitting Diodes with W-Shaped InGaN/GaN Multiple Quantum Wells. In: Bhaumik, J., Chakrabarti, I., De, B.P., Bag, B., Mukherjee, S. (eds) Communication, Devices, and Computing. ICCDC 2017. Lecture Notes in Electrical Engineering, vol 470. Springer, Singapore. https://doi.org/10.1007/978-981-10-8585-7_23

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  • DOI: https://doi.org/10.1007/978-981-10-8585-7_23

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-8584-0

  • Online ISBN: 978-981-10-8585-7

  • eBook Packages: EngineeringEngineering (R0)

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