Five-Input Majority Gate Design with Single Electron Nano-Device

Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 470)

Abstract

A five-input majority gate design using the single electron nano-device is presented in this work for the future ultra-dense integration. The majority gates are important part of the decision-making circuits based on voting. Being one of the nano-electronics devices single electron devices reduces the size of the complete circuit. The function of the five-input majority gate is tested by simulating the proposed circuit in SIMON simulator and analyzing the output waveforms.

Keywords

Nano-electronic circuits Single electron tunneling Five-input majority gate SIMON 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2017

Authors and Affiliations

  1. 1.RCC Institute of Information TechnologyKolkataIndia
  2. 2.Jadavpur UniversityKolkataIndia

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