Abstract
OTA is very popular in electronics industry due to its large number of applications. Double gate MOSFETs are strong contenders for nanoscale region due to its better control over SCEs. In this paper, emphasis is to design low power, better phase margin OTA using double gate MOSFETs. The simulations are done at 45 nm technology.
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Sharma, A., Chand, S., Gill, N. (2018). Design and Simulation of OTA Using 45 nm Technology. In: Muttoo, S. (eds) System and Architecture. Advances in Intelligent Systems and Computing, vol 732. Springer, Singapore. https://doi.org/10.1007/978-981-10-8533-8_4
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DOI: https://doi.org/10.1007/978-981-10-8533-8_4
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