Abstract
IGBT is a power switch device that is very important in modern power electronics. The reliability of IGBT concerns the security of circuits and even the whole system, while IGBT module’s aging is inevitable, so it is necessary to study the aging of IGBT module. At home and abroad, the measurement of the electrical parameters when the bonding wires fall off is used to identify the aging failure state of IGBT, but the consideration is far from comprehensive, the evaluation is also inaccurate. This paper uses the saturation voltage drop which is easy to measure as a state characteristic parameter and considers the influence of junction temperature and collector current to the saturation voltage and IGBT module’s aging failure to evaluate the aging failure of IGBT module.
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Acknowledgements
This work was supported by The National Key Research and Development Program of China (2016YFB1200504-C-02), the Fundamental Research Funds for the Central Universities of China (2016JBM062), and Satellite Power Supply Failure Feature Extraction and Health Degree Calculation Modeling Project (WY - YY/D022011324JY015).
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Guo, Y., Wang, M., Wang, L., Qiu, R., Chen, G. (2018). Simulation of Aging Characteristics of Power Switch Device Based on Saber. In: Jia, L., Qin, Y., Suo, J., Feng, J., Diao, L., An, M. (eds) Proceedings of the 3rd International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2017. EITRT 2017. Lecture Notes in Electrical Engineering, vol 483. Springer, Singapore. https://doi.org/10.1007/978-981-10-7989-4_31
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DOI: https://doi.org/10.1007/978-981-10-7989-4_31
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