Performance Comparison of Battery Chargers Based on SiC-MOSFET and Si-IGBT for Railway Vehicles

  • Yun Kang
  • Zhipo Ji
  • Chun Yang
  • Ruichang Qiu
  • Xuefu Cao
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 482)


New type semiconductors, for instance, SiC-based switching devices, have many performance advantages over Si-based devices, including faster switching and lower power dissipation. In this paper, a research of an application of SiC-based MOSFET in a battery charger for railway vehicles is introduced, focusing on the performances of the charger. This battery charger is designed based on a silicon-IGBT-based charger. The new SiC-based battery charger has the same input and output rating with the original charger, but there’s an increase of switching frequency from 15 to 50 kHz. Therefore, a comparison between the two chargers from the aspects of efficiency, volume and power density is provided in this paper. It can provide some technical support for the design and application of high-power-density battery chargers in the auxiliary power system of railway vehicles.


SiC Auxiliary power system Battery charger Performance comparison 



This work was supported by the China National Science and Technology Support Program under Grant 2016YFB1200504-C-01, Beijing Science and Technology Major Project under Grant Z171100002117011.


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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Yun Kang
    • 1
  • Zhipo Ji
    • 2
  • Chun Yang
    • 3
  • Ruichang Qiu
    • 1
  • Xuefu Cao
    • 1
  1. 1.Beijing Engineering Research Center of Electric Rail Transportation, School of Electrical EngineeringBeijing Jiaotong UniversityBeijingChina
  2. 2.Beijing SpacecraftsBeijingChina
  3. 3.Wuhan Zhongyuan Electronics Group Co., LTD.WuhanChina

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